Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

Valleytronics leverages the valley degree of freedom to engineer light-matter interaction. Here, the authors demonstrate a room temperature, bias-free valley effect in bulk SnS by means of spectroscopic measurements, previously unattainable using atomically thin transition metal dichalcogenides.

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Autores principales:	Shuren Lin, Alexandra Carvalho, Shancheng Yan, Roger Li, Sujung Kim, Aleksandr Rodin, Lídia Carvalho, Emory M. Chan, Xi Wang, Antonio H. Castro Neto, Jie Yao
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/8898ebbc4a6a4a8ba665c89484ae4dd9
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spelling	oai:doaj.org-article:8898ebbc4a6a4a8ba665c89484ae4dd92021-12-02T14:39:47ZAccessing valley degree of freedom in bulk Tin(II) sulfide at room temperature10.1038/s41467-018-03897-32041-1723https://doaj.org/article/8898ebbc4a6a4a8ba665c89484ae4dd92018-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-03897-3https://doaj.org/toc/2041-1723Valleytronics leverages the valley degree of freedom to engineer light-matter interaction. Here, the authors demonstrate a room temperature, bias-free valley effect in bulk SnS by means of spectroscopic measurements, previously unattainable using atomically thin transition metal dichalcogenides.Shuren LinAlexandra CarvalhoShancheng YanRoger LiSujung KimAleksandr RodinLídia CarvalhoEmory M. ChanXi WangAntonio H. Castro NetoJie YaoNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Shuren Lin Alexandra Carvalho Shancheng Yan Roger Li Sujung Kim Aleksandr Rodin Lídia Carvalho Emory M. Chan Xi Wang Antonio H. Castro Neto Jie Yao Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
description	Valleytronics leverages the valley degree of freedom to engineer light-matter interaction. Here, the authors demonstrate a room temperature, bias-free valley effect in bulk SnS by means of spectroscopic measurements, previously unattainable using atomically thin transition metal dichalcogenides.
format	article
author	Shuren Lin Alexandra Carvalho Shancheng Yan Roger Li Sujung Kim Aleksandr Rodin Lídia Carvalho Emory M. Chan Xi Wang Antonio H. Castro Neto Jie Yao
author_facet	Shuren Lin Alexandra Carvalho Shancheng Yan Roger Li Sujung Kim Aleksandr Rodin Lídia Carvalho Emory M. Chan Xi Wang Antonio H. Castro Neto Jie Yao
author_sort	Shuren Lin
title	Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
title_short	Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
title_full	Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
title_fullStr	Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
title_full_unstemmed	Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
title_sort	accessing valley degree of freedom in bulk tin(ii) sulfide at room temperature
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/8898ebbc4a6a4a8ba665c89484ae4dd9
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Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

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