Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

Valleytronics leverages the valley degree of freedom to engineer light-matter interaction. Here, the authors demonstrate a room temperature, bias-free valley effect in bulk SnS by means of spectroscopic measurements, previously unattainable using atomically thin transition metal dichalcogenides.

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Detalles Bibliográficos
Autores principales: Shuren Lin, Alexandra Carvalho, Shancheng Yan, Roger Li, Sujung Kim, Aleksandr Rodin, Lídia Carvalho, Emory M. Chan, Xi Wang, Antonio H. Castro Neto, Jie Yao
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Science
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Acceso en línea:https://doaj.org/article/8898ebbc4a6a4a8ba665c89484ae4dd9
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