Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films
The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25, and 0.30. Compositional dependences of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2011
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/889ccc2323974dcfa387bfdbbb151d2b |
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| Sumario: | The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07,
0.09, 0.14, 0.16, 0.18, 0.20 0.25, and 0.30. Compositional dependences of the low-frequency
dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality
are deduced from these data. All parameters show two compositional thresholds, one situated
near the xc(1)=0.09, and the other near the xc(2)=0.16-0.18. These phase transitions have been
identified in the bulk samples by means of a differential-scanning calorimetric method
(P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).
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