Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films

The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25, and 0.30. Compositional dependences of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are...

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Autores principales:	Vasiliev, Ion, Iovu, Mihail, Colomeico, Eduard
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2011
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/889ccc2323974dcfa387bfdbbb151d2b
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spelling	oai:doaj.org-article:889ccc2323974dcfa387bfdbbb151d2b2021-11-21T12:02:29ZPhotocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films2537-63651810-648Xhttps://doaj.org/article/889ccc2323974dcfa387bfdbbb151d2b2011-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2011/article/4367https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25, and 0.30. Compositional dependences of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are deduced from these data. All parameters show two compositional thresholds, one situated near the xc(1)=0.09, and the other near the xc(2)=0.16-0.18. These phase transitions have been identified in the bulk samples by means of a differential-scanning calorimetric method (P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000). Vasiliev, IonIovu, MihailColomeico, EduardD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 10, Iss 2, Pp 189-193 (2011)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Vasiliev, Ion Iovu, Mihail Colomeico, Eduard Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films
description	The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25, and 0.30. Compositional dependences of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are deduced from these data. All parameters show two compositional thresholds, one situated near the xc(1)=0.09, and the other near the xc(2)=0.16-0.18. These phase transitions have been identified in the bulk samples by means of a differential-scanning calorimetric method (P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).
format	article
author	Vasiliev, Ion Iovu, Mihail Colomeico, Eduard
author_facet	Vasiliev, Ion Iovu, Mihail Colomeico, Eduard
author_sort	Vasiliev, Ion
title	Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films
title_short	Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films
title_full	Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films
title_fullStr	Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films
title_full_unstemmed	Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films
title_sort	photocapacitance relaxation and rigidity transition in gexasxse1-2x amorphous films
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2011
url	https://doaj.org/article/889ccc2323974dcfa387bfdbbb151d2b
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Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films

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