Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells

Abstract We show that the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) can successfully be applied as a hole selective front contact in silicon heterojunction (SHJ) solar cells. In combination with a superior electron selective heterojunction back con...

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Autores principales:	Sara Jäckle, Martin Liebhaber, Clemens Gersmann, Mathias Mews, Klaus Jäger, Silke Christiansen, Klaus Lips
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/88d3f1d23ea24c0dae5eb0de74e3a073
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spelling	oai:doaj.org-article:88d3f1d23ea24c0dae5eb0de74e3a0732021-12-02T15:05:48ZPotential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells10.1038/s41598-017-01946-32045-2322https://doaj.org/article/88d3f1d23ea24c0dae5eb0de74e3a0732017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01946-3https://doaj.org/toc/2045-2322Abstract We show that the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) can successfully be applied as a hole selective front contact in silicon heterojunction (SHJ) solar cells. In combination with a superior electron selective heterojunction back contact based on amorphous silicon (a-Si), mono-crystalline n-type silicon (c-Si) solar cells reach power conversion efficiencies up to 14.8% and high open-circuit voltages exceeding 660 mV. Since in the PEDOT:PSS/c-Si/a-Si solar cell the inferior hybrid junction is determining the electrical device performance we are capable of assessing the recombination velocity (v I ) at the PEDOT:PSS/c-Si interface. An estimated v I of ~400 cm/s demonstrates, that while PEDOT:PSS shows an excellent selectivity on n-type c-Si, the passivation quality provided by the formation of a native oxide at the c-Si surface restricts the performance of the hybrid junction. Furthermore, by comparing the measured external quantum efficiency with optical simulations, we quantify the losses due to parasitic absorption of PEDOT:PSS and reflection of the device layer stack. By pointing out ways to better passivate the hybrid interface and to increase the photocurrent we discuss the full potential of PEDOT:PSS as a front contact in SHJ solar cells.Sara JäckleMartin LiebhaberClemens GersmannMathias MewsKlaus JägerSilke ChristiansenKlaus LipsNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sara Jäckle Martin Liebhaber Clemens Gersmann Mathias Mews Klaus Jäger Silke Christiansen Klaus Lips Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells
description	Abstract We show that the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) can successfully be applied as a hole selective front contact in silicon heterojunction (SHJ) solar cells. In combination with a superior electron selective heterojunction back contact based on amorphous silicon (a-Si), mono-crystalline n-type silicon (c-Si) solar cells reach power conversion efficiencies up to 14.8% and high open-circuit voltages exceeding 660 mV. Since in the PEDOT:PSS/c-Si/a-Si solar cell the inferior hybrid junction is determining the electrical device performance we are capable of assessing the recombination velocity (v I ) at the PEDOT:PSS/c-Si interface. An estimated v I of ~400 cm/s demonstrates, that while PEDOT:PSS shows an excellent selectivity on n-type c-Si, the passivation quality provided by the formation of a native oxide at the c-Si surface restricts the performance of the hybrid junction. Furthermore, by comparing the measured external quantum efficiency with optical simulations, we quantify the losses due to parasitic absorption of PEDOT:PSS and reflection of the device layer stack. By pointing out ways to better passivate the hybrid interface and to increase the photocurrent we discuss the full potential of PEDOT:PSS as a front contact in SHJ solar cells.
format	article
author	Sara Jäckle Martin Liebhaber Clemens Gersmann Mathias Mews Klaus Jäger Silke Christiansen Klaus Lips
author_facet	Sara Jäckle Martin Liebhaber Clemens Gersmann Mathias Mews Klaus Jäger Silke Christiansen Klaus Lips
author_sort	Sara Jäckle
title	Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells
title_short	Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells
title_full	Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells
title_fullStr	Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells
title_full_unstemmed	Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells
title_sort	potential of pedot:pss as a hole selective front contact for silicon heterojunction solar cells
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/88d3f1d23ea24c0dae5eb0de74e3a073
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Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells

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