Plasmonic Photovoltaic Double-Graphene Detector Integrated Into TiN Slot Waveguides
Graphene has emerged as an ultrafast photonic material for on-chip photodetection. However, its atomic thickness limits its interaction with guided optical modes, which in turn weakens the photoresponse of waveguide-integrated graphene photodetectors. Nonetheless, it is possible to enhance the inter...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/891a583dcf0340aba7aefe100c23d658 |
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| Sumario: | Graphene has emerged as an ultrafast photonic material for on-chip photodetection. However, its atomic thickness limits its interaction with guided optical modes, which in turn weakens the photoresponse of waveguide-integrated graphene photodetectors. Nonetheless, it is possible to enhance the interaction of guided light with graphene by nanophotonic means. Herein, we propose a practical design of a plasmon-enhanced photovoltaic double-graphene detector that is integrated into 5 <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m long titanium nitride slot waveguides. The use of double-graphene in this configuration yields a high responsivity of 2.18 A/W and more for a 0.5 V bias, across the telecom C-band and beyond. Moreover, the device operates at an ultra-high-speed beyond 100 GHz with an ultra-low noise equivalent power of <inline-formula><tex-math notation="LaTeX">$<\!35\,$</tex-math></inline-formula>pW/<inline-formula><tex-math notation="LaTeX">$\sqrt{\text{Hz}}$</tex-math></inline-formula>. The reported features are highly promising and are expected to serve the needs of next-generation optical interconnects. |
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