Banhatti, revan and hyper-indices of silicon carbide Si2C3-III[n,m]

In recent years, several structure-based properties of the molecular graphs are understood through the chemical graph theory. The molecular graph GG of a molecule consists of vertices and edges, where vertices represent the atoms in a molecule and edges represent the chemical bonds between these ato...

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Autores principales: Zhao Dongming, Zahid Manzoor Ahmad, Irfan Rida, Arshad Misbah, Fahad Asfand, Ahmad Zahid, Li Li
Formato: article
Lenguaje:EN
Publicado: De Gruyter 2021
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Acceso en línea:https://doaj.org/article/899aefa63de84f01b02acb0d14b2a63f
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Sumario:In recent years, several structure-based properties of the molecular graphs are understood through the chemical graph theory. The molecular graph GG of a molecule consists of vertices and edges, where vertices represent the atoms in a molecule and edges represent the chemical bonds between these atoms. A numerical quantity that gives information related to the topology of the molecular graphs is called a topological index. Several topological indices, contributing to chemical graph theory, have been defined and vastly studied. Recent inclusions in the class of the topological indices are the K-Banhatti indices. In this paper, we established the precise formulas for the first and second K-Banhatti, modified K-Banhatti, K-hyper Banhatti, and hyper Revan indices of silicon carbide Si2C3{{\rm{Si}}}_{2}{{\rm{C}}}_{3}-III[n,m]{\rm{III}}\left[n,m]. In addition, we present the graphical analysis along with the comparison of these indices for Si2C3{{\rm{Si}}}_{2}{{\rm{C}}}_{3}-III[n,m]{\rm{III}}\left[n,m].