Banhatti, revan and hyper-indices of silicon carbide Si2C3-III[n,m]
In recent years, several structure-based properties of the molecular graphs are understood through the chemical graph theory. The molecular graph GG of a molecule consists of vertices and edges, where vertices represent the atoms in a molecule and edges represent the chemical bonds between these ato...
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| Auteurs principaux: | , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
De Gruyter
2021
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| Accès en ligne: | https://doaj.org/article/899aefa63de84f01b02acb0d14b2a63f |
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| Résumé: | In recent years, several structure-based properties of the molecular graphs are understood through the chemical graph theory. The molecular graph GG of a molecule consists of vertices and edges, where vertices represent the atoms in a molecule and edges represent the chemical bonds between these atoms. A numerical quantity that gives information related to the topology of the molecular graphs is called a topological index. Several topological indices, contributing to chemical graph theory, have been defined and vastly studied. Recent inclusions in the class of the topological indices are the K-Banhatti indices. In this paper, we established the precise formulas for the first and second K-Banhatti, modified K-Banhatti, K-hyper Banhatti, and hyper Revan indices of silicon carbide Si2C3{{\rm{Si}}}_{2}{{\rm{C}}}_{3}-III[n,m]{\rm{III}}\left[n,m]. In addition, we present the graphical analysis along with the comparison of these indices for Si2C3{{\rm{Si}}}_{2}{{\rm{C}}}_{3}-III[n,m]{\rm{III}}\left[n,m]. |
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