Electrical characteristics of ZnxIn2S3+x single crystals

The electrophysical characteristics, including the Hall effect, of the family of layered ZnxIn2S3 x (x = 1, 2, and 3) compounds were studied in a temperature range of 250–500 K ( C). They were interpreted taking into account an exponential distribution of traps near...

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Auteurs principaux:	Jitari, Vasile, Şemeacova, Tatiana
Format:	article
Langue:	EN
Publié:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2011
Sujets:	Physics QC1-999 Electronics TK7800-8360
Accès en ligne:	https://doaj.org/article/89d5d131e8e440c2a3d39b69d1a42c7e
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id	oai:doaj.org-article:89d5d131e8e440c2a3d39b69d1a42c7e
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spelling	oai:doaj.org-article:89d5d131e8e440c2a3d39b69d1a42c7e2021-11-21T12:02:27ZElectrical characteristics of ZnxIn2S3+x single crystals2537-63651810-648Xhttps://doaj.org/article/89d5d131e8e440c2a3d39b69d1a42c7e2011-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2011/article/4366https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The electrophysical characteristics, including the Hall effect, of the family of layered ZnxIn2S3 x (x = 1, 2, and 3) compounds were studied in a temperature range of 250–500 K ( C). They were interpreted taking into account an exponential distribution of traps near the conduction band. The main parameters of the material were determined, and the way was shown how they can be varied. Jitari, VasileŞemeacova, TatianaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 10, Iss 2, Pp 186-188 (2011)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Jitari, Vasile Şemeacova, Tatiana Electrical characteristics of ZnxIn2S3+x single crystals
description	The electrophysical characteristics, including the Hall effect, of the family of layered ZnxIn2S3 x (x = 1, 2, and 3) compounds were studied in a temperature range of 250–500 K ( C). They were interpreted taking into account an exponential distribution of traps near the conduction band. The main parameters of the material were determined, and the way was shown how they can be varied.
format	article
author	Jitari, Vasile Şemeacova, Tatiana
author_facet	Jitari, Vasile Şemeacova, Tatiana
author_sort	Jitari, Vasile
title	Electrical characteristics of ZnxIn2S3+x single crystals
title_short	Electrical characteristics of ZnxIn2S3+x single crystals
title_full	Electrical characteristics of ZnxIn2S3+x single crystals
title_fullStr	Electrical characteristics of ZnxIn2S3+x single crystals
title_full_unstemmed	Electrical characteristics of ZnxIn2S3+x single crystals
title_sort	electrical characteristics of znxin2s3+x single crystals
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2011
url	https://doaj.org/article/89d5d131e8e440c2a3d39b69d1a42c7e
work_keys_str_mv	AT jitarivasile electricalcharacteristicsofznxin2s3xsinglecrystals AT semeacovatatiana electricalcharacteristicsofznxin2s3xsinglecrystals
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Electrical characteristics of ZnxIn2S3+x single crystals

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