Electrical characteristics of ZnxIn2S3+x single crystals
The electrophysical characteristics, including the Hall effect, of the family of layered ZnxIn2S3 x (x = 1, 2, and 3) compounds were studied in a temperature range of 250–500 K ( C). They were interpreted taking into account an exponential distribution of traps near...
Guardado en:
Autores principales: | Jitari, Vasile, Şemeacova, Tatiana |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2011
|
Materias: | |
Acceso en línea: | https://doaj.org/article/89d5d131e8e440c2a3d39b69d1a42c7e |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Photoluminescence in CdGa2S4 single crystals
por: Jitari, Vasile, et al.
Publicado: (2008) -
Photoluminescence in MgIn2S4 spinel crystals
por: Jitari, Vasile, et al.
Publicado: (2010) -
Long-term relaxation of photoconductivity in Cd3-xZnxAs2 crystals
por: Kniazev, A., et al.
Publicado: (2006) -
Microstructure of ZnIn2S4 thin films
por: Jitari, Vasile, et al.
Publicado: (2011) -
Anisotropy of photoluminescence in ZnIn S doped with Cu and Mn
por: Jitari, Vasile, et al.
Publicado: (2010)