Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe5

Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe5

To understand the anomalous electronic transport properties of ZrTe5 remains an elusive puzzle. Here, Zhang et al. report direct electronic evidence to the origin of the resistivity anomaly and temperature induced Lifshitz transition in ZrTe5, indicating it being a weak topological insulator.

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Auteurs principaux: Yan Zhang, Chenlu Wang, Li Yu, Guodong Liu, Aiji Liang, Jianwei Huang, Simin Nie, Xuan Sun, Yuxiao Zhang, Bing Shen, Jing Liu, Hongming Weng, Lingxiao Zhao, Genfu Chen, Xiaowen Jia, Cheng Hu, Ying Ding, Wenjuan Zhao, Qiang Gao, Cong Li, Shaolong He, Lin Zhao, Fengfeng Zhang, Shenjin Zhang, Feng Yang, Zhimin Wang, Qinjun Peng, Xi Dai, Zhong Fang, Zuyan Xu, Chuangtian Chen, X. J. Zhou
Format: article
Langue:EN
Publié: Nature Portfolio 2017
Sujets:
Science
Q
Accès en ligne:https://doaj.org/article/8a410e96b5eb4481a82665215a30d6a1
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