Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe5

To understand the anomalous electronic transport properties of ZrTe5 remains an elusive puzzle. Here, Zhang et al. report direct electronic evidence to the origin of the resistivity anomaly and temperature induced Lifshitz transition in ZrTe5, indicating it being a weak topological insulator.

Guardado en:

Detalles Bibliográficos
Autores principales:	Yan Zhang, Chenlu Wang, Li Yu, Guodong Liu, Aiji Liang, Jianwei Huang, Simin Nie, Xuan Sun, Yuxiao Zhang, Bing Shen, Jing Liu, Hongming Weng, Lingxiao Zhao, Genfu Chen, Xiaowen Jia, Cheng Hu, Ying Ding, Wenjuan Zhao, Qiang Gao, Cong Li, Shaolong He, Lin Zhao, Fengfeng Zhang, Shenjin Zhang, Feng Yang, Zhimin Wang, Qinjun Peng, Xi Dai, Zhong Fang, Zuyan Xu, Chuangtian Chen, X. J. Zhou
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/8a410e96b5eb4481a82665215a30d6a1
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Sea el primero en dejar un comentario!

Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe5

Ejemplares similares