Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed. Here the authors propose a model distinct from the NC concept, taking into account domain flips in multiple-domain ferroelectric/paraelectric gate...

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Autores principales:	Xiuyan Li, Akira Toriumi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/8a4844234fa147468cdc00cc60d99f18
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id	oai:doaj.org-article:8a4844234fa147468cdc00cc60d99f18
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spelling	oai:doaj.org-article:8a4844234fa147468cdc00cc60d99f182021-12-02T15:39:19ZStepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack10.1038/s41467-020-15753-42041-1723https://doaj.org/article/8a4844234fa147468cdc00cc60d99f182020-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-15753-4https://doaj.org/toc/2041-1723Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed. Here the authors propose a model distinct from the NC concept, taking into account domain flips in multiple-domain ferroelectric/paraelectric gate stack FETs.Xiuyan LiAkira ToriumiNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Xiuyan Li Akira Toriumi Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack
description	Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed. Here the authors propose a model distinct from the NC concept, taking into account domain flips in multiple-domain ferroelectric/paraelectric gate stack FETs.
format	article
author	Xiuyan Li Akira Toriumi
author_facet	Xiuyan Li Akira Toriumi
author_sort	Xiuyan Li
title	Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack
title_short	Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack
title_full	Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack
title_fullStr	Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack
title_full_unstemmed	Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack
title_sort	stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/8a4844234fa147468cdc00cc60d99f18
work_keys_str_mv	AT xiuyanli stepwiseinternalpotentialjumpscausedbymultipledomainpolarizationflipsinmetalferroelectricmetalparaelectricmetalstack AT akiratoriumi stepwiseinternalpotentialjumpscausedbymultipledomainpolarizationflipsinmetalferroelectricmetalparaelectricmetalstack
_version_	1718385945285230592

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

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