Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed. Here the authors propose a model distinct from the NC concept, taking into account domain flips in multiple-domain ferroelectric/paraelectric gate...

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Autores principales: Xiuyan Li, Akira Toriumi
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/8a4844234fa147468cdc00cc60d99f18
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