Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack
Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed. Here the authors propose a model distinct from the NC concept, taking into account domain flips in multiple-domain ferroelectric/paraelectric gate...
Enregistré dans:
| Auteurs principaux: | , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2020
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/8a4844234fa147468cdc00cc60d99f18 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|