A robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events

Abstract Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si3N4 based metal/substrate assembly is the k...

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Autores principales:	Sachin Yadav, Vinay Kaushik, M. P. Saravanan, R. P. Aloysius, V. Ganesan, Sangeeta Sahoo
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/8a7a39efd281411eace6af600f0ff5fc
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spelling	oai:doaj.org-article:8a7a39efd281411eace6af600f0ff5fc2021-12-02T14:27:45ZA robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events10.1038/s41598-021-86819-62045-2322https://doaj.org/article/8a7a39efd281411eace6af600f0ff5fc2021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-86819-6https://doaj.org/toc/2045-2322Abstract Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si3N4 based metal/substrate assembly is the key to produce majority phase TiN accompanied by TiSi2 & elemental Si as minority phases. The method itself introduces different level of disorder intrinsically by tuning the amount of the non-superconducting minority phases that are controlled by annealing temperature (T a ) and the film thickness. The superconducting critical temperature (T c ) strongly depends on T a and the maximum T c obtained from the demonstrated technique is about 4.8 K for the thickness range ~ 12 nm and above. Besides, the dynamics of IVCs get modulated by the appearance of intermediated resistive steps for decreased T a and the steps get more prominent for reduced thickness. Further, the deviation in the temperature dependent critical current (I c ) from the Ginzburg–Landau theoretical limit varies strongly with the thickness. Finally, the T c , intermediate resistive steps in the IVCs and the depairing current are observed to alter in a similar fashion with T a and the thickness indicating the robustness of the synthesis process to fabricate disordered nitride-based superconductor.Sachin YadavVinay KaushikM. P. SaravananR. P. AloysiusV. GanesanSangeeta SahooNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sachin Yadav Vinay Kaushik M. P. Saravanan R. P. Aloysius V. Ganesan Sangeeta Sahoo A robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events
description	Abstract Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si3N4 based metal/substrate assembly is the key to produce majority phase TiN accompanied by TiSi2 & elemental Si as minority phases. The method itself introduces different level of disorder intrinsically by tuning the amount of the non-superconducting minority phases that are controlled by annealing temperature (T a ) and the film thickness. The superconducting critical temperature (T c ) strongly depends on T a and the maximum T c obtained from the demonstrated technique is about 4.8 K for the thickness range ~ 12 nm and above. Besides, the dynamics of IVCs get modulated by the appearance of intermediated resistive steps for decreased T a and the steps get more prominent for reduced thickness. Further, the deviation in the temperature dependent critical current (I c ) from the Ginzburg–Landau theoretical limit varies strongly with the thickness. Finally, the T c , intermediate resistive steps in the IVCs and the depairing current are observed to alter in a similar fashion with T a and the thickness indicating the robustness of the synthesis process to fabricate disordered nitride-based superconductor.
format	article
author	Sachin Yadav Vinay Kaushik M. P. Saravanan R. P. Aloysius V. Ganesan Sangeeta Sahoo
author_facet	Sachin Yadav Vinay Kaushik M. P. Saravanan R. P. Aloysius V. Ganesan Sangeeta Sahoo
author_sort	Sachin Yadav
title	A robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events
title_short	A robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events
title_full	A robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events
title_fullStr	A robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events
title_full_unstemmed	A robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events
title_sort	robust nitridation technique for fabrication of disordered superconducting tin thin films featuring phase slip events
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/8a7a39efd281411eace6af600f0ff5fc
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A robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events

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