Self-selective ferroelectric memory realized with semimetalic graphene channel

Abstract A new concept of read-out method for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated experimentally. The transconductance of the graphene channel is found to change its sign depending...

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Autores principales:	Sungchul Jung, Jinyoung Park, Junhyung Kim, Wonho Song, Jaehyeong Jo, Hyunjae Park, Myong Kong, Seokhyeong Kang, Muhammad Sheeraz, Ill Won Kim, Tae Heon Kim, Kibog Park
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/8a8e9b1605bc4bb88c6e1386eeabfebf
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spelling	oai:doaj.org-article:8a8e9b1605bc4bb88c6e1386eeabfebf2021-12-05T12:25:23ZSelf-selective ferroelectric memory realized with semimetalic graphene channel10.1038/s41699-021-00272-72397-7132https://doaj.org/article/8a8e9b1605bc4bb88c6e1386eeabfebf2021-12-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00272-7https://doaj.org/toc/2397-7132Abstract A new concept of read-out method for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated experimentally. The transconductance of the graphene channel is found to change its sign depending on the direction of spontaneous polarization (SP) in the underlying ferroelectric layer. This indicates that the memory state of FeRAM, specified by the SP direction of the ferroelectric layer, can be sensed unambiguously with transconductance measurements. With the proposed read-out method, it is possible to construct an array of ferroelectric memory cells in the form of a cross-point structure where the transconductance of a crossing cell can be measured selectively without any additional selector. This type of FeRAM can be a plausible solution for fabricating high speed, ultra-low power, long lifetime, and high density 3D stackable non-volatile memory.Sungchul JungJinyoung ParkJunhyung KimWonho SongJaehyeong JoHyunjae ParkMyong KongSeokhyeong KangMuhammad SheerazIll Won KimTae Heon KimKibog ParkNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Sungchul Jung Jinyoung Park Junhyung Kim Wonho Song Jaehyeong Jo Hyunjae Park Myong Kong Seokhyeong Kang Muhammad Sheeraz Ill Won Kim Tae Heon Kim Kibog Park Self-selective ferroelectric memory realized with semimetalic graphene channel
description	Abstract A new concept of read-out method for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated experimentally. The transconductance of the graphene channel is found to change its sign depending on the direction of spontaneous polarization (SP) in the underlying ferroelectric layer. This indicates that the memory state of FeRAM, specified by the SP direction of the ferroelectric layer, can be sensed unambiguously with transconductance measurements. With the proposed read-out method, it is possible to construct an array of ferroelectric memory cells in the form of a cross-point structure where the transconductance of a crossing cell can be measured selectively without any additional selector. This type of FeRAM can be a plausible solution for fabricating high speed, ultra-low power, long lifetime, and high density 3D stackable non-volatile memory.
format	article
author	Sungchul Jung Jinyoung Park Junhyung Kim Wonho Song Jaehyeong Jo Hyunjae Park Myong Kong Seokhyeong Kang Muhammad Sheeraz Ill Won Kim Tae Heon Kim Kibog Park
author_facet	Sungchul Jung Jinyoung Park Junhyung Kim Wonho Song Jaehyeong Jo Hyunjae Park Myong Kong Seokhyeong Kang Muhammad Sheeraz Ill Won Kim Tae Heon Kim Kibog Park
author_sort	Sungchul Jung
title	Self-selective ferroelectric memory realized with semimetalic graphene channel
title_short	Self-selective ferroelectric memory realized with semimetalic graphene channel
title_full	Self-selective ferroelectric memory realized with semimetalic graphene channel
title_fullStr	Self-selective ferroelectric memory realized with semimetalic graphene channel
title_full_unstemmed	Self-selective ferroelectric memory realized with semimetalic graphene channel
title_sort	self-selective ferroelectric memory realized with semimetalic graphene channel
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/8a8e9b1605bc4bb88c6e1386eeabfebf
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Self-selective ferroelectric memory realized with semimetalic graphene channel

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