Self-selective ferroelectric memory realized with semimetalic graphene channel
Abstract A new concept of read-out method for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated experimentally. The transconductance of the graphene channel is found to change its sign depending...
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Auteurs principaux: | Sungchul Jung, Jinyoung Park, Junhyung Kim, Wonho Song, Jaehyeong Jo, Hyunjae Park, Myong Kong, Seokhyeong Kang, Muhammad Sheeraz, Ill Won Kim, Tae Heon Kim, Kibog Park |
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Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
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Sujets: | |
Accès en ligne: | https://doaj.org/article/8a8e9b1605bc4bb88c6e1386eeabfebf |
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