Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)

Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)

Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated. Ternary logic circuit implementation with carbon nanotube field effect transistors (CNTFETs) and resistive random access memory (RRAM) integrat...

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Auteurs principaux: Furqan Zahoor, Fawnizu Azmadi Hussin, Farooq Ahmad Khanday, Mohamad Radzi Ahmad, Illani Mohd Nawi
Format: article
Langue:EN
Publié: MDPI AG 2021
Sujets:
multiple valued logic (MVL)
resistive random access memory (RRAM)
carbon nanotube field effect transistor (CNTFET)
ternary logic systems
emerging technologies
innovation
Mechanical engineering and machinery
TJ1-1570
Accès en ligne:https://doaj.org/article/8b21c734b4ac446c8dd9d97c8cfae1e8
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https://doaj.org/article/8b21c734b4ac446c8dd9d97c8cfae1e8

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