Two-electron spin correlations in precision placed donors in silicon
Donor impurities in silicon are promising candidates as qubits but in order to create a large-scale quantum computer inter-qubit coupling must be introduced by precise positioning of the donors. Here the authors demonstrate the fabrication, manipulation and readout of a two qubit phosphorous donor d...
Guardado en:
Autores principales: | M. A. Broome, S. K. Gorman, M. G. House, S. J. Hile, J. G. Keizer, D. Keith, C. D. Hill, T. F. Watson, W. J. Baker, L. C. L. Hollenberg, M. Y. Simmons |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2018
|
Materias: | |
Acceso en línea: | https://doaj.org/article/8bb6375d8b1f4be487168b3beb3afb69 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Coherent control of a donor-molecule electron spin qubit in silicon
por: Lukas Fricke, et al.
Publicado: (2021) -
Ab initio calculation of energy levels for phosphorus donors in silicon
por: J. S. Smith, et al.
Publicado: (2017) -
Quantum simulation of the Hubbard model with dopant atoms in silicon
por: J. Salfi, et al.
Publicado: (2016) -
Valley interference and spin exchange at the atomic scale in silicon
por: B. Voisin, et al.
Publicado: (2020) -
Spatially Resolved Decoherence of Donor Spins in Silicon Strained by a Metallic Electrode
por: V. Ranjan, et al.
Publicado: (2021)