Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance

Self-assembly: nickel-silicon clusters behave as quantum dots Silicon-based quantum dots are artificial two-level systems, whose long coherence times make them ideal candidates as qubits for quantum information technology. Researchers from the University of Illinois at Chicago and Argonne National L...

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Autores principales:	Jian-Yih Cheng, Brandon L. Fisher, Nathan P. Guisinger, Carmen M. Lilley
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197
Acceso en línea:	https://doaj.org/article/8c33d8fe9932485098bdb69ce7982c1e
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spelling	oai:doaj.org-article:8c33d8fe9932485098bdb69ce7982c1e2021-12-02T16:05:43ZAtomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance10.1038/s41535-017-0029-42397-4648https://doaj.org/article/8c33d8fe9932485098bdb69ce7982c1e2017-05-01T00:00:00Zhttps://doi.org/10.1038/s41535-017-0029-4https://doaj.org/toc/2397-4648Self-assembly: nickel-silicon clusters behave as quantum dots Silicon-based quantum dots are artificial two-level systems, whose long coherence times make them ideal candidates as qubits for quantum information technology. Researchers from the University of Illinois at Chicago and Argonne National Laboratory present an approach to fabricate via self-assembly randomly distributed clusters, by manipulating the density of nickel on a silicon substrate. Deposition of nickel below a critical density leads to the formation of two types of clusters, both of which behave as isolated quantum dots: confinement gives rise to well-spaced quantized levels similar to the structure of atoms, while measurements under positive and negative bias reveal two symmetric resonances, signatures of tunneling through the highest occupied and lowest unoccupied energy levels, respectively. Such a scalable fabrication method, based on self-assembly, may be further exploited for the design of silicon-based qubitsJian-Yih ChengBrandon L. FisherNathan P. GuisingerCarmen M. LilleyNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Atomic physics. Constitution and properties of matterQC170-197ENnpj Quantum Materials, Vol 2, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197 Jian-Yih Cheng Brandon L. Fisher Nathan P. Guisinger Carmen M. Lilley Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance
description	Self-assembly: nickel-silicon clusters behave as quantum dots Silicon-based quantum dots are artificial two-level systems, whose long coherence times make them ideal candidates as qubits for quantum information technology. Researchers from the University of Illinois at Chicago and Argonne National Laboratory present an approach to fabricate via self-assembly randomly distributed clusters, by manipulating the density of nickel on a silicon substrate. Deposition of nickel below a critical density leads to the formation of two types of clusters, both of which behave as isolated quantum dots: confinement gives rise to well-spaced quantized levels similar to the structure of atoms, while measurements under positive and negative bias reveal two symmetric resonances, signatures of tunneling through the highest occupied and lowest unoccupied energy levels, respectively. Such a scalable fabrication method, based on self-assembly, may be further exploited for the design of silicon-based qubits
format	article
author	Jian-Yih Cheng Brandon L. Fisher Nathan P. Guisinger Carmen M. Lilley
author_facet	Jian-Yih Cheng Brandon L. Fisher Nathan P. Guisinger Carmen M. Lilley
author_sort	Jian-Yih Cheng
title	Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance
title_short	Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance
title_full	Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance
title_fullStr	Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance
title_full_unstemmed	Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance
title_sort	atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/8c33d8fe9932485098bdb69ce7982c1e
work_keys_str_mv	AT jianyihcheng atomicallymanufacturednickelsiliconquantumdotsdisplayingrobustresonanttunnelingandnegativedifferentialresistance AT brandonlfisher atomicallymanufacturednickelsiliconquantumdotsdisplayingrobustresonanttunnelingandnegativedifferentialresistance AT nathanpguisinger atomicallymanufacturednickelsiliconquantumdotsdisplayingrobustresonanttunnelingandnegativedifferentialresistance AT carmenmlilley atomicallymanufacturednickelsiliconquantumdotsdisplayingrobustresonanttunnelingandnegativedifferentialresistance
_version_	1718385160578138112

Atomically manufactured nickel–silicon quantum dots displaying robust resonant tunneling and negative differential resistance

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