Silicon: quantum dot photovoltage triodes

While Silicon is widely used for electronic devices, its band-gap limits its use for infrared detection. Here, Zheng et al present a method for overcoming this limitation, by integrating colloidal quantum dots, with the resulting structure exhibiting high sensitivity to infrared radiation.

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Autores principales:	Wen Zhou, Li Zheng, Zhijun Ning, Xinhong Cheng, Fang Wang, Kaimin Xu, Rui Xu, Zhongyu Liu, Man Luo, Weida Hu, Huijun Guo, Wenjia Zhou, Yuehui Yu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/8c711a6d7e7c4db2aa64fb5f586b620e
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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spelling	oai:doaj.org-article:8c711a6d7e7c4db2aa64fb5f586b620e2021-11-21T12:35:09ZSilicon: quantum dot photovoltage triodes10.1038/s41467-021-27050-92041-1723https://doaj.org/article/8c711a6d7e7c4db2aa64fb5f586b620e2021-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-27050-9https://doaj.org/toc/2041-1723While Silicon is widely used for electronic devices, its band-gap limits its use for infrared detection. Here, Zheng et al present a method for overcoming this limitation, by integrating colloidal quantum dots, with the resulting structure exhibiting high sensitivity to infrared radiation.Wen ZhouLi ZhengZhijun NingXinhong ChengFang WangKaimin XuRui XuZhongyu LiuMan LuoWeida HuHuijun GuoWenjia ZhouYuehui YuNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Wen Zhou Li Zheng Zhijun Ning Xinhong Cheng Fang Wang Kaimin Xu Rui Xu Zhongyu Liu Man Luo Weida Hu Huijun Guo Wenjia Zhou Yuehui Yu Silicon: quantum dot photovoltage triodes
description	While Silicon is widely used for electronic devices, its band-gap limits its use for infrared detection. Here, Zheng et al present a method for overcoming this limitation, by integrating colloidal quantum dots, with the resulting structure exhibiting high sensitivity to infrared radiation.
format	article
author	Wen Zhou Li Zheng Zhijun Ning Xinhong Cheng Fang Wang Kaimin Xu Rui Xu Zhongyu Liu Man Luo Weida Hu Huijun Guo Wenjia Zhou Yuehui Yu
author_facet	Wen Zhou Li Zheng Zhijun Ning Xinhong Cheng Fang Wang Kaimin Xu Rui Xu Zhongyu Liu Man Luo Weida Hu Huijun Guo Wenjia Zhou Yuehui Yu
author_sort	Wen Zhou
title	Silicon: quantum dot photovoltage triodes
title_short	Silicon: quantum dot photovoltage triodes
title_full	Silicon: quantum dot photovoltage triodes
title_fullStr	Silicon: quantum dot photovoltage triodes
title_full_unstemmed	Silicon: quantum dot photovoltage triodes
title_sort	silicon: quantum dot photovoltage triodes
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/8c711a6d7e7c4db2aa64fb5f586b620e
work_keys_str_mv	AT wenzhou siliconquantumdotphotovoltagetriodes AT lizheng siliconquantumdotphotovoltagetriodes AT zhijunning siliconquantumdotphotovoltagetriodes AT xinhongcheng siliconquantumdotphotovoltagetriodes AT fangwang siliconquantumdotphotovoltagetriodes AT kaiminxu siliconquantumdotphotovoltagetriodes AT ruixu siliconquantumdotphotovoltagetriodes AT zhongyuliu siliconquantumdotphotovoltagetriodes AT manluo siliconquantumdotphotovoltagetriodes AT weidahu siliconquantumdotphotovoltagetriodes AT huijunguo siliconquantumdotphotovoltagetriodes AT wenjiazhou siliconquantumdotphotovoltagetriodes AT yuehuiyu siliconquantumdotphotovoltagetriodes
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Silicon: quantum dot photovoltage triodes

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