Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods

Abstract Novel hybrid organic-inorganic nanostructures fabricated to utilize non-radiative resonant energy transfer mechanism are considered to be extremely attractive for a variety of light emitters for down converting of ultaviolet light and for photovoltaic applications since they can be much mor...

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Autores principales:	Mathias Forsberg, Elena Alexandra Serban, Ching-Lien Hsiao, Muhammad Junaid, Jens Birch, Galia Pozina
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/8ca5da96343548a9a1bbf5fafbac0b71
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spelling	oai:doaj.org-article:8ca5da96343548a9a1bbf5fafbac0b712021-12-02T16:06:38ZNear band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods10.1038/s41598-017-01052-42045-2322https://doaj.org/article/8ca5da96343548a9a1bbf5fafbac0b712017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01052-4https://doaj.org/toc/2045-2322Abstract Novel hybrid organic-inorganic nanostructures fabricated to utilize non-radiative resonant energy transfer mechanism are considered to be extremely attractive for a variety of light emitters for down converting of ultaviolet light and for photovoltaic applications since they can be much more efficient compared to devices grown with common design. Organic-inorganic hybrid structures based on green polyfluorene (F8BT) and GaN (0001) nanorods grown by magnetron sputtering on Si (111) substrates are studied. In such nanorods, stacking faults can form periodic polymorphic quantum wells characterized by bright luminescence. In difference to GaN exciton emission, the recombination rate for the stacking fault related emission increases in the presence of polyfluorene film, which can be understood in terms of Förster interaction mechanism. From comparison of dynamic properties of the stacking fault related luminescence in the hybrid structures and in the bare GaN nanorods, the pumping efficiency of non-radiative resonant energy transfer in hybrids was estimated to be as high as 35% at low temperatures.Mathias ForsbergElena Alexandra SerbanChing-Lien HsiaoMuhammad JunaidJens BirchGalia PozinaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Mathias Forsberg Elena Alexandra Serban Ching-Lien Hsiao Muhammad Junaid Jens Birch Galia Pozina Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods
description	Abstract Novel hybrid organic-inorganic nanostructures fabricated to utilize non-radiative resonant energy transfer mechanism are considered to be extremely attractive for a variety of light emitters for down converting of ultaviolet light and for photovoltaic applications since they can be much more efficient compared to devices grown with common design. Organic-inorganic hybrid structures based on green polyfluorene (F8BT) and GaN (0001) nanorods grown by magnetron sputtering on Si (111) substrates are studied. In such nanorods, stacking faults can form periodic polymorphic quantum wells characterized by bright luminescence. In difference to GaN exciton emission, the recombination rate for the stacking fault related emission increases in the presence of polyfluorene film, which can be understood in terms of Förster interaction mechanism. From comparison of dynamic properties of the stacking fault related luminescence in the hybrid structures and in the bare GaN nanorods, the pumping efficiency of non-radiative resonant energy transfer in hybrids was estimated to be as high as 35% at low temperatures.
format	article
author	Mathias Forsberg Elena Alexandra Serban Ching-Lien Hsiao Muhammad Junaid Jens Birch Galia Pozina
author_facet	Mathias Forsberg Elena Alexandra Serban Ching-Lien Hsiao Muhammad Junaid Jens Birch Galia Pozina
author_sort	Mathias Forsberg
title	Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods
title_short	Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods
title_full	Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods
title_fullStr	Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods
title_full_unstemmed	Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods
title_sort	near band gap luminescence in hybrid organic-inorganic structures based on sputtered gan nanorods
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/8ca5da96343548a9a1bbf5fafbac0b71
work_keys_str_mv	AT mathiasforsberg nearbandgapluminescenceinhybridorganicinorganicstructuresbasedonsputteredgannanorods AT elenaalexandraserban nearbandgapluminescenceinhybridorganicinorganicstructuresbasedonsputteredgannanorods AT chinglienhsiao nearbandgapluminescenceinhybridorganicinorganicstructuresbasedonsputteredgannanorods AT muhammadjunaid nearbandgapluminescenceinhybridorganicinorganicstructuresbasedonsputteredgannanorods AT jensbirch nearbandgapluminescenceinhybridorganicinorganicstructuresbasedonsputteredgannanorods AT galiapozina nearbandgapluminescenceinhybridorganicinorganicstructuresbasedonsputteredgannanorods
_version_	1718384914003394560

Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods

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