Chiral domain walls of Mn3Sn and their memory

The structure of domain walls is of interest to the antiferromagnetic spintronics. Here the authors find an additional contribution to the Hall conductivity tensor and a transverse magnetization generated by domain walls in Mn3Sn and report that the sign of this contribution depends on the prior his...

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Autores principales: Xiaokang Li, Clément Collignon, Liangcai Xu, Huakun Zuo, Antonella Cavanna, Ulf Gennser, Dominique Mailly, Benoît Fauqué, Leon Balents, Zengwei Zhu, Kamran Behnia
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/8d00769ea10a4917b4e423709b5657ce
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Sumario:The structure of domain walls is of interest to the antiferromagnetic spintronics. Here the authors find an additional contribution to the Hall conductivity tensor and a transverse magnetization generated by domain walls in Mn3Sn and report that the sign of this contribution depends on the prior history of the sample.