Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories

We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to their low power switching characteristics compared to other emerging technologies, the greatest challenge for FTJs is the...

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Autores principales:	Nicholas Jao, Yi Xiao, Atanu K. Saha, Sumeet Kumar Gupta, Vijaykrishnan Narayanan
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Crossbar ferroelectric devices magnetic memory nonvolatile memory (NVM) Computer engineering. Computer hardware TK7885-7895
Acceso en línea:	https://doaj.org/article/8d5320a5456d46949f03d62dcfe93918
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id	oai:doaj.org-article:8d5320a5456d46949f03d62dcfe93918
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spelling	oai:doaj.org-article:8d5320a5456d46949f03d62dcfe939182021-11-18T00:11:27ZDesign Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories2329-923110.1109/JXCDC.2021.3117566https://doaj.org/article/8d5320a5456d46949f03d62dcfe939182021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9558797/https://doaj.org/toc/2329-9231We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to their low power switching characteristics compared to other emerging technologies, the greatest challenge for FTJs is the tradeoff between integration density and read performance. Our analysis highlights the need to co-optimize the ferroelectric thickness of the FTJ and read/write voltages to achieve proper functionality at large array sizes. Our analysis shows that FTJ-based crossbar achieves 93% higher sense margin at isoread power of 116 nW (per bit), but this FTJ design comes at a cost of <inline-formula> <tex-math notation="LaTeX">$9.28\times $ </tex-math></inline-formula> higher write power at isowrite time of 250 ns. In response, we study the potential tradeoffs of design points outside the feasible region to understand what device characteristics are desired to overcome such challenges.Nicholas JaoYi XiaoAtanu K. SahaSumeet Kumar GuptaVijaykrishnan NarayananIEEEarticleCrossbarferroelectric devicesmagnetic memorynonvolatile memory (NVM)Computer engineering. Computer hardwareTK7885-7895ENIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 115-122 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Crossbar ferroelectric devices magnetic memory nonvolatile memory (NVM) Computer engineering. Computer hardware TK7885-7895
spellingShingle	Crossbar ferroelectric devices magnetic memory nonvolatile memory (NVM) Computer engineering. Computer hardware TK7885-7895 Nicholas Jao Yi Xiao Atanu K. Saha Sumeet Kumar Gupta Vijaykrishnan Narayanan Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories
description	We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to their low power switching characteristics compared to other emerging technologies, the greatest challenge for FTJs is the tradeoff between integration density and read performance. Our analysis highlights the need to co-optimize the ferroelectric thickness of the FTJ and read/write voltages to achieve proper functionality at large array sizes. Our analysis shows that FTJ-based crossbar achieves 93% higher sense margin at isoread power of 116 nW (per bit), but this FTJ design comes at a cost of <inline-formula> <tex-math notation="LaTeX">$9.28\times $ </tex-math></inline-formula> higher write power at isowrite time of 250 ns. In response, we study the potential tradeoffs of design points outside the feasible region to understand what device characteristics are desired to overcome such challenges.
format	article
author	Nicholas Jao Yi Xiao Atanu K. Saha Sumeet Kumar Gupta Vijaykrishnan Narayanan
author_facet	Nicholas Jao Yi Xiao Atanu K. Saha Sumeet Kumar Gupta Vijaykrishnan Narayanan
author_sort	Nicholas Jao
title	Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories
title_short	Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories
title_full	Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories
title_fullStr	Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories
title_full_unstemmed	Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories
title_sort	design space exploration of ferroelectric tunnel junction toward crossbar memories
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/8d5320a5456d46949f03d62dcfe93918
work_keys_str_mv	AT nicholasjao designspaceexplorationofferroelectrictunneljunctiontowardcrossbarmemories AT yixiao designspaceexplorationofferroelectrictunneljunctiontowardcrossbarmemories AT atanuksaha designspaceexplorationofferroelectrictunneljunctiontowardcrossbarmemories AT sumeetkumargupta designspaceexplorationofferroelectrictunneljunctiontowardcrossbarmemories AT vijaykrishnannarayanan designspaceexplorationofferroelectrictunneljunctiontowardcrossbarmemories
_version_	1718425177037996032

Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories

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