Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories

We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to their low power switching characteristics compared to other emerging technologies, the greatest challenge for FTJs is the...

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Autores principales: Nicholas Jao, Yi Xiao, Atanu K. Saha, Sumeet Kumar Gupta, Vijaykrishnan Narayanan
Formato: article
Lenguaje:EN
Publicado: IEEE 2021
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Acceso en línea:https://doaj.org/article/8d5320a5456d46949f03d62dcfe93918
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