Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories
We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to their low power switching characteristics compared to other emerging technologies, the greatest challenge for FTJs is the...
Guardado en:
Autores principales: | Nicholas Jao, Yi Xiao, Atanu K. Saha, Sumeet Kumar Gupta, Vijaykrishnan Narayanan |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
IEEE
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/8d5320a5456d46949f03d62dcfe93918 |
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