Fast spin-valley-based quantum gates in Si with micromagnets

Abstract An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a synthetic spin–orbit coupling (SOC), which allows high-fid...

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Autores principales:	Peihao Huang, Xuedong Hu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Physics QC1-999 Electronic computers. Computer science QA75.5-76.95
Acceso en línea:	https://doaj.org/article/8daf73c3151f4dab9ce5c4edbe20603e
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id	oai:doaj.org-article:8daf73c3151f4dab9ce5c4edbe20603e
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spelling	oai:doaj.org-article:8daf73c3151f4dab9ce5c4edbe20603e2021-11-21T12:13:59ZFast spin-valley-based quantum gates in Si with micromagnets10.1038/s41534-021-00500-42056-6387https://doaj.org/article/8daf73c3151f4dab9ce5c4edbe20603e2021-11-01T00:00:00Zhttps://doi.org/10.1038/s41534-021-00500-4https://doaj.org/toc/2056-6387Abstract An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a synthetic spin–orbit coupling (SOC), which allows high-fidelity spin manipulation and strong interaction between an electron spin and cavity photons. To scaled-up quantum computing, multiple technical challenges remain to be overcome, including controlling the valley degree of freedom, which is usually considered detrimental to a spin qubit. Here, we show that it is possible to significantly enhance the electrical manipulation of a spin qubit through the effect of constructive interference and the large spin-valley mixing. To characterize the quality of spin control, we also studied spin dephasing due to charge noise through spin-valley mixing. The competition between the increased control strength and spin dephasing produces two sweet-spots, where the quality factor of the spin qubit can be high. Finally, we reveal that the synthetic SOC leads to distinctive spin relaxation in silicon, which explains recent experiments.Peihao HuangXuedong HuNature PortfolioarticlePhysicsQC1-999Electronic computers. Computer scienceQA75.5-76.95ENnpj Quantum Information, Vol 7, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronic computers. Computer science QA75.5-76.95
spellingShingle	Physics QC1-999 Electronic computers. Computer science QA75.5-76.95 Peihao Huang Xuedong Hu Fast spin-valley-based quantum gates in Si with micromagnets
description	Abstract An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a synthetic spin–orbit coupling (SOC), which allows high-fidelity spin manipulation and strong interaction between an electron spin and cavity photons. To scaled-up quantum computing, multiple technical challenges remain to be overcome, including controlling the valley degree of freedom, which is usually considered detrimental to a spin qubit. Here, we show that it is possible to significantly enhance the electrical manipulation of a spin qubit through the effect of constructive interference and the large spin-valley mixing. To characterize the quality of spin control, we also studied spin dephasing due to charge noise through spin-valley mixing. The competition between the increased control strength and spin dephasing produces two sweet-spots, where the quality factor of the spin qubit can be high. Finally, we reveal that the synthetic SOC leads to distinctive spin relaxation in silicon, which explains recent experiments.
format	article
author	Peihao Huang Xuedong Hu
author_facet	Peihao Huang Xuedong Hu
author_sort	Peihao Huang
title	Fast spin-valley-based quantum gates in Si with micromagnets
title_short	Fast spin-valley-based quantum gates in Si with micromagnets
title_full	Fast spin-valley-based quantum gates in Si with micromagnets
title_fullStr	Fast spin-valley-based quantum gates in Si with micromagnets
title_full_unstemmed	Fast spin-valley-based quantum gates in Si with micromagnets
title_sort	fast spin-valley-based quantum gates in si with micromagnets
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/8daf73c3151f4dab9ce5c4edbe20603e
work_keys_str_mv	AT peihaohuang fastspinvalleybasedquantumgatesinsiwithmicromagnets AT xuedonghu fastspinvalleybasedquantumgatesinsiwithmicromagnets
_version_	1718419136955023360

Fast spin-valley-based quantum gates in Si with micromagnets

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