Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Multilayer hexagonal boron nitride (hBN) is a desirable dielectric substrate for 2D electronics but its controllable synthesis is challenging. Here, the authors report a vapor–liquid–solid growth method to achieve uniform multilayer hBN by using a molten Fe82B18 alloy and N2 as reactants.

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Auteurs principaux:	Zhiyuan Shi, Xiujun Wang, Qingtian Li, Peng Yang, Guangyuan Lu, Ren Jiang, Huishan Wang, Chao Zhang, Chunxiao Cong, Zhi Liu, Tianru Wu, Haomin Wang, Qingkai Yu, Xiaoming Xie
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2020
Sujets:	Science Q
Accès en ligne:	https://doaj.org/article/8e4c858c9fc64e1589e0bca0ae54187e
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id	oai:doaj.org-article:8e4c858c9fc64e1589e0bca0ae54187e
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spelling	oai:doaj.org-article:8e4c858c9fc64e1589e0bca0ae54187e2021-12-02T16:50:00ZVapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates10.1038/s41467-020-14596-32041-1723https://doaj.org/article/8e4c858c9fc64e1589e0bca0ae54187e2020-02-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-14596-3https://doaj.org/toc/2041-1723Multilayer hexagonal boron nitride (hBN) is a desirable dielectric substrate for 2D electronics but its controllable synthesis is challenging. Here, the authors report a vapor–liquid–solid growth method to achieve uniform multilayer hBN by using a molten Fe82B18 alloy and N2 as reactants.Zhiyuan ShiXiujun WangQingtian LiPeng YangGuangyuan LuRen JiangHuishan WangChao ZhangChunxiao CongZhi LiuTianru WuHaomin WangQingkai YuXiaoming XieNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Zhiyuan Shi Xiujun Wang Qingtian Li Peng Yang Guangyuan Lu Ren Jiang Huishan Wang Chao Zhang Chunxiao Cong Zhi Liu Tianru Wu Haomin Wang Qingkai Yu Xiaoming Xie Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates
description	Multilayer hexagonal boron nitride (hBN) is a desirable dielectric substrate for 2D electronics but its controllable synthesis is challenging. Here, the authors report a vapor–liquid–solid growth method to achieve uniform multilayer hBN by using a molten Fe82B18 alloy and N2 as reactants.
format	article
author	Zhiyuan Shi Xiujun Wang Qingtian Li Peng Yang Guangyuan Lu Ren Jiang Huishan Wang Chao Zhang Chunxiao Cong Zhi Liu Tianru Wu Haomin Wang Qingkai Yu Xiaoming Xie
author_facet	Zhiyuan Shi Xiujun Wang Qingtian Li Peng Yang Guangyuan Lu Ren Jiang Huishan Wang Chao Zhang Chunxiao Cong Zhi Liu Tianru Wu Haomin Wang Qingkai Yu Xiaoming Xie
author_sort	Zhiyuan Shi
title	Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates
title_short	Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates
title_full	Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates
title_fullStr	Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates
title_full_unstemmed	Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates
title_sort	vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/8e4c858c9fc64e1589e0bca0ae54187e
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Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

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