Depth Profile Analysis of the Modified Layer of Poly(vinyltrimethylsilane) Films Treated by Direct-Current Discharge
Previously, we found that modification of the membrane surface from polyvinyltrimethylsilane (PVTMS) by treatment with low-temperature plasma induced by low pressure DC discharge leads to a significant increase in gas separation characteristics. To understand the mechanism of this phenomenon, in thi...
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oai:doaj.org-article:8e9c8bdcad994cddbcb723297434c1002021-11-25T17:15:58ZDepth Profile Analysis of the Modified Layer of Poly(vinyltrimethylsilane) Films Treated by Direct-Current Discharge10.3390/coatings111113172079-6412https://doaj.org/article/8e9c8bdcad994cddbcb723297434c1002021-10-01T00:00:00Zhttps://www.mdpi.com/2079-6412/11/11/1317https://doaj.org/toc/2079-6412Previously, we found that modification of the membrane surface from polyvinyltrimethylsilane (PVTMS) by treatment with low-temperature plasma induced by low pressure DC discharge leads to a significant increase in gas separation characteristics. To understand the mechanism of this phenomenon, in this article XPS combined with precision etching 10 keV beam of Ar<sub>2500</sub><sup>+</sup> clusters was used for depth profiling of PVTMS spin-coated films before and after DC discharge treatment. The etching craters depths were measured by stylus surface profiler. The average etching rate of the untreated PVTMS film by Ar<sub>2500</sub><sup>+</sup> clusters was defined (230 nm/min). It was found that the low temperature plasma treatment of PVTMS leads to a sharp increase in the oxygen concentration on a surface with a simultaneous decrease in the carbon content. The experimental data obtained indicate also that the treatment of PVTMS film by plasma leads not only to a change in the chemical structure of the surface, but also to the formation of a gradient subsurface layer with a thickness of about 50 nm.Mikhail PiskarevElena SkrylevaAlla GilmanBoris SenatulinAlexander ZinovievDaria SyrtsovaVladimir TeplyakovAlexander KuznetsovMDPI AGarticlepoly(vinyltrimethylsilane) filmdirect current discharge modificationX-ray photoelectron spectroscopyprecision etchingargon gas cluster ion beams (GCIB)depth profile analysisEngineering (General). Civil engineering (General)TA1-2040ENCoatings, Vol 11, Iss 1317, p 1317 (2021) |
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DOAJ |
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poly(vinyltrimethylsilane) film direct current discharge modification X-ray photoelectron spectroscopy precision etching argon gas cluster ion beams (GCIB) depth profile analysis Engineering (General). Civil engineering (General) TA1-2040 |
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poly(vinyltrimethylsilane) film direct current discharge modification X-ray photoelectron spectroscopy precision etching argon gas cluster ion beams (GCIB) depth profile analysis Engineering (General). Civil engineering (General) TA1-2040 Mikhail Piskarev Elena Skryleva Alla Gilman Boris Senatulin Alexander Zinoviev Daria Syrtsova Vladimir Teplyakov Alexander Kuznetsov Depth Profile Analysis of the Modified Layer of Poly(vinyltrimethylsilane) Films Treated by Direct-Current Discharge |
description |
Previously, we found that modification of the membrane surface from polyvinyltrimethylsilane (PVTMS) by treatment with low-temperature plasma induced by low pressure DC discharge leads to a significant increase in gas separation characteristics. To understand the mechanism of this phenomenon, in this article XPS combined with precision etching 10 keV beam of Ar<sub>2500</sub><sup>+</sup> clusters was used for depth profiling of PVTMS spin-coated films before and after DC discharge treatment. The etching craters depths were measured by stylus surface profiler. The average etching rate of the untreated PVTMS film by Ar<sub>2500</sub><sup>+</sup> clusters was defined (230 nm/min). It was found that the low temperature plasma treatment of PVTMS leads to a sharp increase in the oxygen concentration on a surface with a simultaneous decrease in the carbon content. The experimental data obtained indicate also that the treatment of PVTMS film by plasma leads not only to a change in the chemical structure of the surface, but also to the formation of a gradient subsurface layer with a thickness of about 50 nm. |
format |
article |
author |
Mikhail Piskarev Elena Skryleva Alla Gilman Boris Senatulin Alexander Zinoviev Daria Syrtsova Vladimir Teplyakov Alexander Kuznetsov |
author_facet |
Mikhail Piskarev Elena Skryleva Alla Gilman Boris Senatulin Alexander Zinoviev Daria Syrtsova Vladimir Teplyakov Alexander Kuznetsov |
author_sort |
Mikhail Piskarev |
title |
Depth Profile Analysis of the Modified Layer of Poly(vinyltrimethylsilane) Films Treated by Direct-Current Discharge |
title_short |
Depth Profile Analysis of the Modified Layer of Poly(vinyltrimethylsilane) Films Treated by Direct-Current Discharge |
title_full |
Depth Profile Analysis of the Modified Layer of Poly(vinyltrimethylsilane) Films Treated by Direct-Current Discharge |
title_fullStr |
Depth Profile Analysis of the Modified Layer of Poly(vinyltrimethylsilane) Films Treated by Direct-Current Discharge |
title_full_unstemmed |
Depth Profile Analysis of the Modified Layer of Poly(vinyltrimethylsilane) Films Treated by Direct-Current Discharge |
title_sort |
depth profile analysis of the modified layer of poly(vinyltrimethylsilane) films treated by direct-current discharge |
publisher |
MDPI AG |
publishDate |
2021 |
url |
https://doaj.org/article/8e9c8bdcad994cddbcb723297434c100 |
work_keys_str_mv |
AT mikhailpiskarev depthprofileanalysisofthemodifiedlayerofpolyvinyltrimethylsilanefilmstreatedbydirectcurrentdischarge AT elenaskryleva depthprofileanalysisofthemodifiedlayerofpolyvinyltrimethylsilanefilmstreatedbydirectcurrentdischarge AT allagilman depthprofileanalysisofthemodifiedlayerofpolyvinyltrimethylsilanefilmstreatedbydirectcurrentdischarge AT borissenatulin depthprofileanalysisofthemodifiedlayerofpolyvinyltrimethylsilanefilmstreatedbydirectcurrentdischarge AT alexanderzinoviev depthprofileanalysisofthemodifiedlayerofpolyvinyltrimethylsilanefilmstreatedbydirectcurrentdischarge AT dariasyrtsova depthprofileanalysisofthemodifiedlayerofpolyvinyltrimethylsilanefilmstreatedbydirectcurrentdischarge AT vladimirteplyakov depthprofileanalysisofthemodifiedlayerofpolyvinyltrimethylsilanefilmstreatedbydirectcurrentdischarge AT alexanderkuznetsov depthprofileanalysisofthemodifiedlayerofpolyvinyltrimethylsilanefilmstreatedbydirectcurrentdischarge |
_version_ |
1718412544107872256 |