Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements

Abstract The knowledge of minority carrier lifetime of a semiconductor is important for the assessment of its quality and design of electronic devices. Time-resolved photoluminescence (TRPL) measurements offer the possibility to extract effective lifetimes in the nanosecond range. However, it is dif...

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Autores principales:	Thomas P. Weiss, Benjamin Bissig, Thomas Feurer, Romain Carron, Stephan Buecheler, Ayodhya N. Tiwari
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/8f0e996071044b29b6f00ee7686f0bd8
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spelling	oai:doaj.org-article:8f0e996071044b29b6f00ee7686f0bd82021-12-02T15:09:43ZBulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements10.1038/s41598-019-41716-x2045-2322https://doaj.org/article/8f0e996071044b29b6f00ee7686f0bd82019-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-019-41716-xhttps://doaj.org/toc/2045-2322Abstract The knowledge of minority carrier lifetime of a semiconductor is important for the assessment of its quality and design of electronic devices. Time-resolved photoluminescence (TRPL) measurements offer the possibility to extract effective lifetimes in the nanosecond range. However, it is difficult to discriminate between surface and bulk recombination and consequently the bulk properties of the semiconductor cannot be estimated reliably. Here we present an approach to constrain systematically the bulk and surface recombination parameters in semiconducting layers and reduces to finding the roots of a mathematical function. This method disentangles the bulk and surface recombination based on TRPL decay times of samples with different surface preparations. The technique is exemplarily applied to a CuInSe2 and a back-graded Cu(In,Ga)Se2 compound semiconductor, and upper and lower bounds for the recombination parameters and the mobility are obtained. Sets of calculated parameters are extracted and used as input for simulations of photoluminescence transients, yielding a good match to experimental data and validating the effectiveness of the methodology. A script for the simulation of TRPL transients is provided.Thomas P. WeissBenjamin BissigThomas FeurerRomain CarronStephan BuechelerAyodhya N. TiwariNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 9, Iss 1, Pp 1-13 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Thomas P. Weiss Benjamin Bissig Thomas Feurer Romain Carron Stephan Buecheler Ayodhya N. Tiwari Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements
description	Abstract The knowledge of minority carrier lifetime of a semiconductor is important for the assessment of its quality and design of electronic devices. Time-resolved photoluminescence (TRPL) measurements offer the possibility to extract effective lifetimes in the nanosecond range. However, it is difficult to discriminate between surface and bulk recombination and consequently the bulk properties of the semiconductor cannot be estimated reliably. Here we present an approach to constrain systematically the bulk and surface recombination parameters in semiconducting layers and reduces to finding the roots of a mathematical function. This method disentangles the bulk and surface recombination based on TRPL decay times of samples with different surface preparations. The technique is exemplarily applied to a CuInSe2 and a back-graded Cu(In,Ga)Se2 compound semiconductor, and upper and lower bounds for the recombination parameters and the mobility are obtained. Sets of calculated parameters are extracted and used as input for simulations of photoluminescence transients, yielding a good match to experimental data and validating the effectiveness of the methodology. A script for the simulation of TRPL transients is provided.
format	article
author	Thomas P. Weiss Benjamin Bissig Thomas Feurer Romain Carron Stephan Buecheler Ayodhya N. Tiwari
author_facet	Thomas P. Weiss Benjamin Bissig Thomas Feurer Romain Carron Stephan Buecheler Ayodhya N. Tiwari
author_sort	Thomas P. Weiss
title	Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements
title_short	Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements
title_full	Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements
title_fullStr	Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements
title_full_unstemmed	Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements
title_sort	bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/8f0e996071044b29b6f00ee7686f0bd8
work_keys_str_mv	AT thomaspweiss bulkandsurfacerecombinationpropertiesinthinfilmsemiconductorswithdifferentsurfacetreatmentsfromtimeresolvedphotoluminescencemeasurements AT benjaminbissig bulkandsurfacerecombinationpropertiesinthinfilmsemiconductorswithdifferentsurfacetreatmentsfromtimeresolvedphotoluminescencemeasurements AT thomasfeurer bulkandsurfacerecombinationpropertiesinthinfilmsemiconductorswithdifferentsurfacetreatmentsfromtimeresolvedphotoluminescencemeasurements AT romaincarron bulkandsurfacerecombinationpropertiesinthinfilmsemiconductorswithdifferentsurfacetreatmentsfromtimeresolvedphotoluminescencemeasurements AT stephanbuecheler bulkandsurfacerecombinationpropertiesinthinfilmsemiconductorswithdifferentsurfacetreatmentsfromtimeresolvedphotoluminescencemeasurements AT ayodhyantiwari bulkandsurfacerecombinationpropertiesinthinfilmsemiconductorswithdifferentsurfacetreatmentsfromtimeresolvedphotoluminescencemeasurements
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Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements

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