Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor

The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide (HfO<sub>2</sub>) high-κ gate dielectric has been demonstrated previously as one of promising amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this study, the more positive thres...

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Autores principales:	Wan-Ta Fan, Po-Tsun Liu, Po-Yi Kuo, Chien-Min Chang, I-Han Liu, Yue Kuo
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	amorphous oxide semiconductor (AOS) density functional theory (DFT) density of states (DOS) high-κ technology computer aided design (TCAD) thin-film-transistor (TFT) Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/8f2f2df2639b432aa571c3967b6fa3cd
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spelling	oai:doaj.org-article:8f2f2df2639b432aa571c3967b6fa3cd2021-11-25T18:32:13ZNumerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor10.3390/nano111130702079-4991https://doaj.org/article/8f2f2df2639b432aa571c3967b6fa3cd2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3070https://doaj.org/toc/2079-4991The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide (HfO<sub>2</sub>) high-κ gate dielectric has been demonstrated previously as one of promising amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this study, the more positive threshold voltage shift (∆V<sub>TH</sub>) and reduced I<sub>ON</sub> were observed when increasing the oxygen ratio during a-IWO deposition. Through simple material measurements and Technology Computer Aided Design (TCAD) analysis, the distinct correlation between different chemical species and the corresponding bulk and interface density of states (DOS) parameters were systematically deduced, validating the proposed physical mechanisms with a quantum model for a-IWO nanosheet TFT. The effects of oxygen flow on oxygen interstitial (O<sub>i</sub>) defects were numerically proved for modulating bulk dopant concentration N<sub>d</sub> and interface density of Gaussian acceptor trap N<sub>GA</sub> at the front channel, significantly dominating the transfer characteristics of a-IWO TFT. Furthermore, based on the studies of density functional theory (DFT) for the correlation between formation energy <i>E</i><sup>f</sup> of O<sub>i</sub> defect and Fermi level (<i>E</i><sub>F</sub>) position, we propose a numerical methodology for monitoring the possible concentration distribution of O<sub>i</sub> as a function of a bias condition for AOS TFTs.Wan-Ta FanPo-Tsun LiuPo-Yi KuoChien-Min ChangI-Han LiuYue KuoMDPI AGarticleamorphous oxide semiconductor (AOS)density functional theory (DFT)density of states (DOS)high-κtechnology computer aided design (TCAD)thin-film-transistor (TFT)ChemistryQD1-999ENNanomaterials, Vol 11, Iss 3070, p 3070 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	amorphous oxide semiconductor (AOS) density functional theory (DFT) density of states (DOS) high-κ technology computer aided design (TCAD) thin-film-transistor (TFT) Chemistry QD1-999
spellingShingle	amorphous oxide semiconductor (AOS) density functional theory (DFT) density of states (DOS) high-κ technology computer aided design (TCAD) thin-film-transistor (TFT) Chemistry QD1-999 Wan-Ta Fan Po-Tsun Liu Po-Yi Kuo Chien-Min Chang I-Han Liu Yue Kuo Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor
description	The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide (HfO<sub>2</sub>) high-κ gate dielectric has been demonstrated previously as one of promising amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this study, the more positive threshold voltage shift (∆V<sub>TH</sub>) and reduced I<sub>ON</sub> were observed when increasing the oxygen ratio during a-IWO deposition. Through simple material measurements and Technology Computer Aided Design (TCAD) analysis, the distinct correlation between different chemical species and the corresponding bulk and interface density of states (DOS) parameters were systematically deduced, validating the proposed physical mechanisms with a quantum model for a-IWO nanosheet TFT. The effects of oxygen flow on oxygen interstitial (O<sub>i</sub>) defects were numerically proved for modulating bulk dopant concentration N<sub>d</sub> and interface density of Gaussian acceptor trap N<sub>GA</sub> at the front channel, significantly dominating the transfer characteristics of a-IWO TFT. Furthermore, based on the studies of density functional theory (DFT) for the correlation between formation energy <i>E</i><sup>f</sup> of O<sub>i</sub> defect and Fermi level (<i>E</i><sub>F</sub>) position, we propose a numerical methodology for monitoring the possible concentration distribution of O<sub>i</sub> as a function of a bias condition for AOS TFTs.
format	article
author	Wan-Ta Fan Po-Tsun Liu Po-Yi Kuo Chien-Min Chang I-Han Liu Yue Kuo
author_facet	Wan-Ta Fan Po-Tsun Liu Po-Yi Kuo Chien-Min Chang I-Han Liu Yue Kuo
author_sort	Wan-Ta Fan
title	Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor
title_short	Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor
title_full	Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor
title_fullStr	Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor
title_full_unstemmed	Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor
title_sort	numerical analysis of oxygen-related defects in amorphous in-w-o nanosheet thin-film transistor
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/8f2f2df2639b432aa571c3967b6fa3cd
work_keys_str_mv	AT wantafan numericalanalysisofoxygenrelateddefectsinamorphousinwonanosheetthinfilmtransistor AT potsunliu numericalanalysisofoxygenrelateddefectsinamorphousinwonanosheetthinfilmtransistor AT poyikuo numericalanalysisofoxygenrelateddefectsinamorphousinwonanosheetthinfilmtransistor AT chienminchang numericalanalysisofoxygenrelateddefectsinamorphousinwonanosheetthinfilmtransistor AT ihanliu numericalanalysisofoxygenrelateddefectsinamorphousinwonanosheetthinfilmtransistor AT yuekuo numericalanalysisofoxygenrelateddefectsinamorphousinwonanosheetthinfilmtransistor
_version_	1718411031318888448

Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor

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