Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor

The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide (HfO<sub>2</sub>) high-κ gate dielectric has been demonstrated previously as one of promising amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this study, the more positive thres...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Wan-Ta Fan, Po-Tsun Liu, Po-Yi Kuo, Chien-Min Chang, I-Han Liu, Yue Kuo
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	amorphous oxide semiconductor (AOS) density functional theory (DFT) density of states (DOS) high-κ technology computer aided design (TCAD) thin-film-transistor (TFT) Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/8f2f2df2639b432aa571c3967b6fa3cd
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Sea el primero en dejar un comentario!

Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor

Ejemplares similares