Carrier dynamics of Mn-induced states in GaN thin films

Abstract GaN-based materials are widely used for light emission devices, but the intrinsic property of wide bandgap makes it improper for photovoltaic applications. Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been...

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Autores principales:	Yu-Ting Chen, Chi-Yuan Yang, Po-Cheng Chen, Jinn-Kong Sheu, Kung-Hsuan Lin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/8f4832c2bd184eaea95fbd770d6b086c
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spelling	oai:doaj.org-article:8f4832c2bd184eaea95fbd770d6b086c2021-12-02T12:32:14ZCarrier dynamics of Mn-induced states in GaN thin films10.1038/s41598-017-06316-72045-2322https://doaj.org/article/8f4832c2bd184eaea95fbd770d6b086c2017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-06316-7https://doaj.org/toc/2045-2322Abstract GaN-based materials are widely used for light emission devices, but the intrinsic property of wide bandgap makes it improper for photovoltaic applications. Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been greatly improved. We conducted transient optical measurements to study the carrier dynamics of Mn-doped GaN. The lifetime of carriers in the Mn-related intermediate bands (at 1.5 eV above the valence band edge) is around 1.7 ns. The carrier relaxation within the Mn-induced bandtail states was on the order of a few hundred picoseconds. The relaxation times of different states are important parameters for optimization of conversion efficiency for intermediate-band solar cells.Yu-Ting ChenChi-Yuan YangPo-Cheng ChenJinn-Kong SheuKung-Hsuan LinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Yu-Ting Chen Chi-Yuan Yang Po-Cheng Chen Jinn-Kong Sheu Kung-Hsuan Lin Carrier dynamics of Mn-induced states in GaN thin films
description	Abstract GaN-based materials are widely used for light emission devices, but the intrinsic property of wide bandgap makes it improper for photovoltaic applications. Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been greatly improved. We conducted transient optical measurements to study the carrier dynamics of Mn-doped GaN. The lifetime of carriers in the Mn-related intermediate bands (at 1.5 eV above the valence band edge) is around 1.7 ns. The carrier relaxation within the Mn-induced bandtail states was on the order of a few hundred picoseconds. The relaxation times of different states are important parameters for optimization of conversion efficiency for intermediate-band solar cells.
format	article
author	Yu-Ting Chen Chi-Yuan Yang Po-Cheng Chen Jinn-Kong Sheu Kung-Hsuan Lin
author_facet	Yu-Ting Chen Chi-Yuan Yang Po-Cheng Chen Jinn-Kong Sheu Kung-Hsuan Lin
author_sort	Yu-Ting Chen
title	Carrier dynamics of Mn-induced states in GaN thin films
title_short	Carrier dynamics of Mn-induced states in GaN thin films
title_full	Carrier dynamics of Mn-induced states in GaN thin films
title_fullStr	Carrier dynamics of Mn-induced states in GaN thin films
title_full_unstemmed	Carrier dynamics of Mn-induced states in GaN thin films
title_sort	carrier dynamics of mn-induced states in gan thin films
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/8f4832c2bd184eaea95fbd770d6b086c
work_keys_str_mv	AT yutingchen carrierdynamicsofmninducedstatesinganthinfilms AT chiyuanyang carrierdynamicsofmninducedstatesinganthinfilms AT pochengchen carrierdynamicsofmninducedstatesinganthinfilms AT jinnkongsheu carrierdynamicsofmninducedstatesinganthinfilms AT kunghsuanlin carrierdynamicsofmninducedstatesinganthinfilms
_version_	1718394171269578752

Carrier dynamics of Mn-induced states in GaN thin films

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