Carrier dynamics of Mn-induced states in GaN thin films

Abstract GaN-based materials are widely used for light emission devices, but the intrinsic property of wide bandgap makes it improper for photovoltaic applications. Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been...

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Auteurs principaux: Yu-Ting Chen, Chi-Yuan Yang, Po-Cheng Chen, Jinn-Kong Sheu, Kung-Hsuan Lin
Format: article
Langue:EN
Publié: Nature Portfolio 2017
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Accès en ligne:https://doaj.org/article/8f4832c2bd184eaea95fbd770d6b086c
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