Design and Synthesis of Inductorless Passive Cell Operating as Stop-Band Negative Group Delay Function

This paper develops an original circuit theory of unfamiliar stop-band (SB) negative group delay (NGD) topology. The proposed NGD topology is implemented without inductor component. The developed theory is established with passive cell constituted by RC-network based high-pass (HP) and low-pass (LP)...

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Autores principales: Mathieu Guerin, Yang Liu, Alexandre Douyere, George Chan, Fayu Wan, Sebastien Lallechere, Wenceslas Rahajandraibe, Blaise Ravelo
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Publicado: IEEE 2021
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spelling oai:doaj.org-article:90268c1803af4e08a6d91e2c96b219402021-11-23T00:01:41ZDesign and Synthesis of Inductorless Passive Cell Operating as Stop-Band Negative Group Delay Function2169-353610.1109/ACCESS.2021.3095814https://doaj.org/article/90268c1803af4e08a6d91e2c96b219402021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9477553/https://doaj.org/toc/2169-3536This paper develops an original circuit theory of unfamiliar stop-band (SB) negative group delay (NGD) topology. The proposed NGD topology is implemented without inductor component. The developed theory is established with passive cell constituted by RC-network based high-pass (HP) and low-pass (LP) NGD composite circuits. The analytical investigation of the SB-NGD circuit is introduced from the elaboration of voltage transfer function (VTF). The canonical form enabling to identify SB-NGD circuit is analytically expressed. The different SB-NGD characteristics as GD value, and, center and cut-off frequencies are innovatively formulated in function of the circuit resistor and capacitor components. The existence condition of SB-NGD function is also established. The inductorless SB-NGD topology is validated by a proof-of-concept (POC) circuit implemented by surface-mounted-device (SMD) component based printed circuit board (PCB). The measured VTF magnitude and group delay (GD) are extracted from the experimented S-parameters. A good agreement between the calculated, simulated and measured results is obtained. The SB-NGD behavior has measured center frequency of about 32 MHz. The lower- and upper-NGD cut-off frequencies are about 9.15 MHz and 98.3 MHz. The optimal NGD values at low and higher frequencies are −3.25 ns and −56 ps.Mathieu GuerinYang LiuAlexandre DouyereGeorge ChanFayu WanSebastien LallechereWenceslas RahajandraibeBlaise RaveloIEEEarticleCircuit theorynegative group delay (NGD)stop-band (SB) NGD functionpassive cellinductorless topologyElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Access, Vol 9, Pp 100141-100153 (2021)
institution DOAJ
collection DOAJ
language EN
topic Circuit theory
negative group delay (NGD)
stop-band (SB) NGD function
passive cell
inductorless topology
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
spellingShingle Circuit theory
negative group delay (NGD)
stop-band (SB) NGD function
passive cell
inductorless topology
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Mathieu Guerin
Yang Liu
Alexandre Douyere
George Chan
Fayu Wan
Sebastien Lallechere
Wenceslas Rahajandraibe
Blaise Ravelo
Design and Synthesis of Inductorless Passive Cell Operating as Stop-Band Negative Group Delay Function
description This paper develops an original circuit theory of unfamiliar stop-band (SB) negative group delay (NGD) topology. The proposed NGD topology is implemented without inductor component. The developed theory is established with passive cell constituted by RC-network based high-pass (HP) and low-pass (LP) NGD composite circuits. The analytical investigation of the SB-NGD circuit is introduced from the elaboration of voltage transfer function (VTF). The canonical form enabling to identify SB-NGD circuit is analytically expressed. The different SB-NGD characteristics as GD value, and, center and cut-off frequencies are innovatively formulated in function of the circuit resistor and capacitor components. The existence condition of SB-NGD function is also established. The inductorless SB-NGD topology is validated by a proof-of-concept (POC) circuit implemented by surface-mounted-device (SMD) component based printed circuit board (PCB). The measured VTF magnitude and group delay (GD) are extracted from the experimented S-parameters. A good agreement between the calculated, simulated and measured results is obtained. The SB-NGD behavior has measured center frequency of about 32 MHz. The lower- and upper-NGD cut-off frequencies are about 9.15 MHz and 98.3 MHz. The optimal NGD values at low and higher frequencies are −3.25 ns and −56 ps.
format article
author Mathieu Guerin
Yang Liu
Alexandre Douyere
George Chan
Fayu Wan
Sebastien Lallechere
Wenceslas Rahajandraibe
Blaise Ravelo
author_facet Mathieu Guerin
Yang Liu
Alexandre Douyere
George Chan
Fayu Wan
Sebastien Lallechere
Wenceslas Rahajandraibe
Blaise Ravelo
author_sort Mathieu Guerin
title Design and Synthesis of Inductorless Passive Cell Operating as Stop-Band Negative Group Delay Function
title_short Design and Synthesis of Inductorless Passive Cell Operating as Stop-Band Negative Group Delay Function
title_full Design and Synthesis of Inductorless Passive Cell Operating as Stop-Band Negative Group Delay Function
title_fullStr Design and Synthesis of Inductorless Passive Cell Operating as Stop-Band Negative Group Delay Function
title_full_unstemmed Design and Synthesis of Inductorless Passive Cell Operating as Stop-Band Negative Group Delay Function
title_sort design and synthesis of inductorless passive cell operating as stop-band negative group delay function
publisher IEEE
publishDate 2021
url https://doaj.org/article/90268c1803af4e08a6d91e2c96b21940
work_keys_str_mv AT mathieuguerin designandsynthesisofinductorlesspassivecelloperatingasstopbandnegativegroupdelayfunction
AT yangliu designandsynthesisofinductorlesspassivecelloperatingasstopbandnegativegroupdelayfunction
AT alexandredouyere designandsynthesisofinductorlesspassivecelloperatingasstopbandnegativegroupdelayfunction
AT georgechan designandsynthesisofinductorlesspassivecelloperatingasstopbandnegativegroupdelayfunction
AT fayuwan designandsynthesisofinductorlesspassivecelloperatingasstopbandnegativegroupdelayfunction
AT sebastienlallechere designandsynthesisofinductorlesspassivecelloperatingasstopbandnegativegroupdelayfunction
AT wenceslasrahajandraibe designandsynthesisofinductorlesspassivecelloperatingasstopbandnegativegroupdelayfunction
AT blaiseravelo designandsynthesisofinductorlesspassivecelloperatingasstopbandnegativegroupdelayfunction
_version_ 1718417387931303936