Assessment of Two-Dimensional Materials-Based Technology for Analog Neural Networks

Embedding advanced cognitive capabilities in battery-constrained edge devices requires specialized hardware with new circuit architecture and—in the medium/long term—new device technology. We evaluate the potential of recently investigated devices based on 2-D materials for the...

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Autores principales: Maksym Paliy, Sebastiano Strangio, Piero Ruiu, Giuseppe Iannaccone
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Lenguaje:EN
Publicado: IEEE 2021
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spelling oai:doaj.org-article:913fd2d8c30e4ac4b2a9d43aad822ebd2021-11-24T00:03:29ZAssessment of Two-Dimensional Materials-Based Technology for Analog Neural Networks2329-923110.1109/JXCDC.2021.3121534https://doaj.org/article/913fd2d8c30e4ac4b2a9d43aad822ebd2021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9580839/https://doaj.org/toc/2329-9231Embedding advanced cognitive capabilities in battery-constrained edge devices requires specialized hardware with new circuit architecture and&#x2014;in the medium/long term&#x2014;new device technology. We evaluate the potential of recently investigated devices based on 2-D materials for the realization of analog deep neural networks (DNNs), by comparing the performance of neural networks based on the same circuit architecture using three different device technologies for transistors and analog memories. As a reference result, it is included in the comparison also an implementation on a standard 0.18 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> CMOS technology. Our architecture of choice makes use of current-mode analog vector-matrix multipliers (VMMs) based on programmable current mirrors (CMs) consisting of transistors and floating-gate non-volatile memories. We consider experimentally demonstrated transistors and memories based on a monolayer molybdenum disulfide channel and ideal devices based on heterostructures of multilayer&#x2013;monolayer PtSe<sub>2</sub>. Following a consistent methodology for device-circuit co-design and optimization, we estimate the layout area, energy efficiency, and throughput as a function of the equivalent number of bits (ENOB), which is strictly correlated with classification accuracy. System-level tradeoffs are apparent: for a small ENOB experimental MoS<sub>2</sub> floating-gate devices are already very promising; in our comparison, a larger ENOB (7 bits) is only achieved with CMOS, signaling the necessity to improve linearity and electrostatics of devices with 2-D materials.Maksym PaliySebastiano StrangioPiero RuiuGiuseppe IannacconeIEEEarticle2-D materialsanalog neural networksfloating-gate memoriesvector-matrix multipliers (VMMs)Computer engineering. Computer hardwareTK7885-7895ENIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 141-149 (2021)
institution DOAJ
collection DOAJ
language EN
topic 2-D materials
analog neural networks
floating-gate memories
vector-matrix multipliers (VMMs)
Computer engineering. Computer hardware
TK7885-7895
spellingShingle 2-D materials
analog neural networks
floating-gate memories
vector-matrix multipliers (VMMs)
Computer engineering. Computer hardware
TK7885-7895
Maksym Paliy
Sebastiano Strangio
Piero Ruiu
Giuseppe Iannaccone
Assessment of Two-Dimensional Materials-Based Technology for Analog Neural Networks
description Embedding advanced cognitive capabilities in battery-constrained edge devices requires specialized hardware with new circuit architecture and&#x2014;in the medium/long term&#x2014;new device technology. We evaluate the potential of recently investigated devices based on 2-D materials for the realization of analog deep neural networks (DNNs), by comparing the performance of neural networks based on the same circuit architecture using three different device technologies for transistors and analog memories. As a reference result, it is included in the comparison also an implementation on a standard 0.18 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> CMOS technology. Our architecture of choice makes use of current-mode analog vector-matrix multipliers (VMMs) based on programmable current mirrors (CMs) consisting of transistors and floating-gate non-volatile memories. We consider experimentally demonstrated transistors and memories based on a monolayer molybdenum disulfide channel and ideal devices based on heterostructures of multilayer&#x2013;monolayer PtSe<sub>2</sub>. Following a consistent methodology for device-circuit co-design and optimization, we estimate the layout area, energy efficiency, and throughput as a function of the equivalent number of bits (ENOB), which is strictly correlated with classification accuracy. System-level tradeoffs are apparent: for a small ENOB experimental MoS<sub>2</sub> floating-gate devices are already very promising; in our comparison, a larger ENOB (7 bits) is only achieved with CMOS, signaling the necessity to improve linearity and electrostatics of devices with 2-D materials.
format article
author Maksym Paliy
Sebastiano Strangio
Piero Ruiu
Giuseppe Iannaccone
author_facet Maksym Paliy
Sebastiano Strangio
Piero Ruiu
Giuseppe Iannaccone
author_sort Maksym Paliy
title Assessment of Two-Dimensional Materials-Based Technology for Analog Neural Networks
title_short Assessment of Two-Dimensional Materials-Based Technology for Analog Neural Networks
title_full Assessment of Two-Dimensional Materials-Based Technology for Analog Neural Networks
title_fullStr Assessment of Two-Dimensional Materials-Based Technology for Analog Neural Networks
title_full_unstemmed Assessment of Two-Dimensional Materials-Based Technology for Analog Neural Networks
title_sort assessment of two-dimensional materials-based technology for analog neural networks
publisher IEEE
publishDate 2021
url https://doaj.org/article/913fd2d8c30e4ac4b2a9d43aad822ebd
work_keys_str_mv AT maksympaliy assessmentoftwodimensionalmaterialsbasedtechnologyforanalogneuralnetworks
AT sebastianostrangio assessmentoftwodimensionalmaterialsbasedtechnologyforanalogneuralnetworks
AT pieroruiu assessmentoftwodimensionalmaterialsbasedtechnologyforanalogneuralnetworks
AT giuseppeiannaccone assessmentoftwodimensionalmaterialsbasedtechnologyforanalogneuralnetworks
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