Photoconductivity of acid exfoliated and flash-light-processed MoS2 films

Abstract MoS2 has been studied intensively during recent years as a semiconducting material in several fields, including optoelectronics, for applications such as solar cells and phototransistors. The photoresponse mechanisms of MoS2 have been discussed but are not fully understood, especially the p...

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Autores principales:	Renyun Zhang, Magnus Hummelgård, Viviane Forsberg, Henrik Andersson, Magnus Engholm, Thomas Öhlund, Martin Olsen, Jonas Örtegren, Håkan Olin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/9156041005334e3c923b082701ab1e22
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spelling	oai:doaj.org-article:9156041005334e3c923b082701ab1e222021-12-02T15:08:39ZPhotoconductivity of acid exfoliated and flash-light-processed MoS2 films10.1038/s41598-018-21688-02045-2322https://doaj.org/article/9156041005334e3c923b082701ab1e222018-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-21688-0https://doaj.org/toc/2045-2322Abstract MoS2 has been studied intensively during recent years as a semiconducting material in several fields, including optoelectronics, for applications such as solar cells and phototransistors. The photoresponse mechanisms of MoS2 have been discussed but are not fully understood, especially the phenomenon in which the photocurrent slowly increases. Here, we report on a study of the photoresponse flash-light-processed MoS2 films of different thicknesses and areas. The photoresponse of such films under different light intensities and bias voltages was measured, showing significant current changes with a quick response followed by a slow one upon exposure to pulsed light. Our in-depth study suggested that the slow response was due to the photothermal effect that heats the MoS2; this hypothesis was supported by the resistivity change at different temperatures. The results obtained from MoS2 films with various thicknesses indicated that the minority-carrier diffusion length was 1.36 µm. This study explained the mechanism of the slow response of the MoS2 film and determined the effective thickness of MoS2 for a photoresponse to occur. The method used here for fabricating MoS2 films could be used for fabricating optoelectronic devices due to its simplicity.Renyun ZhangMagnus HummelgårdViviane ForsbergHenrik AnderssonMagnus EngholmThomas ÖhlundMartin OlsenJonas ÖrtegrenHåkan OlinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Renyun Zhang Magnus Hummelgård Viviane Forsberg Henrik Andersson Magnus Engholm Thomas Öhlund Martin Olsen Jonas Örtegren Håkan Olin Photoconductivity of acid exfoliated and flash-light-processed MoS2 films
description	Abstract MoS2 has been studied intensively during recent years as a semiconducting material in several fields, including optoelectronics, for applications such as solar cells and phototransistors. The photoresponse mechanisms of MoS2 have been discussed but are not fully understood, especially the phenomenon in which the photocurrent slowly increases. Here, we report on a study of the photoresponse flash-light-processed MoS2 films of different thicknesses and areas. The photoresponse of such films under different light intensities and bias voltages was measured, showing significant current changes with a quick response followed by a slow one upon exposure to pulsed light. Our in-depth study suggested that the slow response was due to the photothermal effect that heats the MoS2; this hypothesis was supported by the resistivity change at different temperatures. The results obtained from MoS2 films with various thicknesses indicated that the minority-carrier diffusion length was 1.36 µm. This study explained the mechanism of the slow response of the MoS2 film and determined the effective thickness of MoS2 for a photoresponse to occur. The method used here for fabricating MoS2 films could be used for fabricating optoelectronic devices due to its simplicity.
format	article
author	Renyun Zhang Magnus Hummelgård Viviane Forsberg Henrik Andersson Magnus Engholm Thomas Öhlund Martin Olsen Jonas Örtegren Håkan Olin
author_facet	Renyun Zhang Magnus Hummelgård Viviane Forsberg Henrik Andersson Magnus Engholm Thomas Öhlund Martin Olsen Jonas Örtegren Håkan Olin
author_sort	Renyun Zhang
title	Photoconductivity of acid exfoliated and flash-light-processed MoS2 films
title_short	Photoconductivity of acid exfoliated and flash-light-processed MoS2 films
title_full	Photoconductivity of acid exfoliated and flash-light-processed MoS2 films
title_fullStr	Photoconductivity of acid exfoliated and flash-light-processed MoS2 films
title_full_unstemmed	Photoconductivity of acid exfoliated and flash-light-processed MoS2 films
title_sort	photoconductivity of acid exfoliated and flash-light-processed mos2 films
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/9156041005334e3c923b082701ab1e22
work_keys_str_mv	AT renyunzhang photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT magnushummelgard photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT vivianeforsberg photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT henrikandersson photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT magnusengholm photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT thomasohlund photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT martinolsen photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT jonasortegren photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT hakanolin photoconductivityofacidexfoliatedandflashlightprocessedmos2films
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Photoconductivity of acid exfoliated and flash-light-processed MoS2 films

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