Photoconductivity of acid exfoliated and flash-light-processed MoS2 films
Abstract MoS2 has been studied intensively during recent years as a semiconducting material in several fields, including optoelectronics, for applications such as solar cells and phototransistors. The photoresponse mechanisms of MoS2 have been discussed but are not fully understood, especially the p...
Guardado en:
Autores principales: | , , , , , , , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2018
|
Materias: | |
Acceso en línea: | https://doaj.org/article/9156041005334e3c923b082701ab1e22 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
id |
oai:doaj.org-article:9156041005334e3c923b082701ab1e22 |
---|---|
record_format |
dspace |
spelling |
oai:doaj.org-article:9156041005334e3c923b082701ab1e222021-12-02T15:08:39ZPhotoconductivity of acid exfoliated and flash-light-processed MoS2 films10.1038/s41598-018-21688-02045-2322https://doaj.org/article/9156041005334e3c923b082701ab1e222018-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-21688-0https://doaj.org/toc/2045-2322Abstract MoS2 has been studied intensively during recent years as a semiconducting material in several fields, including optoelectronics, for applications such as solar cells and phototransistors. The photoresponse mechanisms of MoS2 have been discussed but are not fully understood, especially the phenomenon in which the photocurrent slowly increases. Here, we report on a study of the photoresponse flash-light-processed MoS2 films of different thicknesses and areas. The photoresponse of such films under different light intensities and bias voltages was measured, showing significant current changes with a quick response followed by a slow one upon exposure to pulsed light. Our in-depth study suggested that the slow response was due to the photothermal effect that heats the MoS2; this hypothesis was supported by the resistivity change at different temperatures. The results obtained from MoS2 films with various thicknesses indicated that the minority-carrier diffusion length was 1.36 µm. This study explained the mechanism of the slow response of the MoS2 film and determined the effective thickness of MoS2 for a photoresponse to occur. The method used here for fabricating MoS2 films could be used for fabricating optoelectronic devices due to its simplicity.Renyun ZhangMagnus HummelgårdViviane ForsbergHenrik AnderssonMagnus EngholmThomas ÖhlundMartin OlsenJonas ÖrtegrenHåkan OlinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-8 (2018) |
institution |
DOAJ |
collection |
DOAJ |
language |
EN |
topic |
Medicine R Science Q |
spellingShingle |
Medicine R Science Q Renyun Zhang Magnus Hummelgård Viviane Forsberg Henrik Andersson Magnus Engholm Thomas Öhlund Martin Olsen Jonas Örtegren Håkan Olin Photoconductivity of acid exfoliated and flash-light-processed MoS2 films |
description |
Abstract MoS2 has been studied intensively during recent years as a semiconducting material in several fields, including optoelectronics, for applications such as solar cells and phototransistors. The photoresponse mechanisms of MoS2 have been discussed but are not fully understood, especially the phenomenon in which the photocurrent slowly increases. Here, we report on a study of the photoresponse flash-light-processed MoS2 films of different thicknesses and areas. The photoresponse of such films under different light intensities and bias voltages was measured, showing significant current changes with a quick response followed by a slow one upon exposure to pulsed light. Our in-depth study suggested that the slow response was due to the photothermal effect that heats the MoS2; this hypothesis was supported by the resistivity change at different temperatures. The results obtained from MoS2 films with various thicknesses indicated that the minority-carrier diffusion length was 1.36 µm. This study explained the mechanism of the slow response of the MoS2 film and determined the effective thickness of MoS2 for a photoresponse to occur. The method used here for fabricating MoS2 films could be used for fabricating optoelectronic devices due to its simplicity. |
format |
article |
author |
Renyun Zhang Magnus Hummelgård Viviane Forsberg Henrik Andersson Magnus Engholm Thomas Öhlund Martin Olsen Jonas Örtegren Håkan Olin |
author_facet |
Renyun Zhang Magnus Hummelgård Viviane Forsberg Henrik Andersson Magnus Engholm Thomas Öhlund Martin Olsen Jonas Örtegren Håkan Olin |
author_sort |
Renyun Zhang |
title |
Photoconductivity of acid exfoliated and flash-light-processed MoS2 films |
title_short |
Photoconductivity of acid exfoliated and flash-light-processed MoS2 films |
title_full |
Photoconductivity of acid exfoliated and flash-light-processed MoS2 films |
title_fullStr |
Photoconductivity of acid exfoliated and flash-light-processed MoS2 films |
title_full_unstemmed |
Photoconductivity of acid exfoliated and flash-light-processed MoS2 films |
title_sort |
photoconductivity of acid exfoliated and flash-light-processed mos2 films |
publisher |
Nature Portfolio |
publishDate |
2018 |
url |
https://doaj.org/article/9156041005334e3c923b082701ab1e22 |
work_keys_str_mv |
AT renyunzhang photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT magnushummelgard photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT vivianeforsberg photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT henrikandersson photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT magnusengholm photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT thomasohlund photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT martinolsen photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT jonasortegren photoconductivityofacidexfoliatedandflashlightprocessedmos2films AT hakanolin photoconductivityofacidexfoliatedandflashlightprocessedmos2films |
_version_ |
1718388074136731648 |