Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors
As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and compared the electrical characteristics of single...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/91bfabc34f474cfeb3a50c2a484d8f87 |
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| Sumario: | As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and compared the electrical characteristics of single-NS and stacked-NS structures. The performance of the multi-gate and gate-all-around transistors was then further analyzed. The stacked gate-all-around thin-film transistor exhibited superior performance and excellent temperature design flexibility. In brief, the stacked gate-all-around structure for thin-film transistors structure has the potential to overcome the challenges associated with downscaling. |
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