Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors

As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and compared the electrical characteristics of single...

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Autores principales:	Yu-Ru Lin, Yu-Hsien Lin, Yi-Yun Yang, Yung-Chun Wu
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	Gate-all-around (GAA) junctionless (JL) nanosheet (NS) stacked structure thin-film transistor (TFT) Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/91bfabc34f474cfeb3a50c2a484d8f87
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spelling	oai:doaj.org-article:91bfabc34f474cfeb3a50c2a484d8f872021-11-19T00:01:12ZComprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors2168-673410.1109/JEDS.2019.2937142https://doaj.org/article/91bfabc34f474cfeb3a50c2a484d8f872019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8811513/https://doaj.org/toc/2168-6734As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and compared the electrical characteristics of single-NS and stacked-NS structures. The performance of the multi-gate and gate-all-around transistors was then further analyzed. The stacked gate-all-around thin-film transistor exhibited superior performance and excellent temperature design flexibility. In brief, the stacked gate-all-around structure for thin-film transistors structure has the potential to overcome the challenges associated with downscaling.Yu-Ru LinYu-Hsien LinYi-Yun YangYung-Chun WuIEEEarticleGate-all-around (GAA)junctionless (JL)nanosheet (NS)stacked structurethin-film transistor (TFT)Electrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 969-972 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Gate-all-around (GAA) junctionless (JL) nanosheet (NS) stacked structure thin-film transistor (TFT) Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Gate-all-around (GAA) junctionless (JL) nanosheet (NS) stacked structure thin-film transistor (TFT) Electrical engineering. Electronics. Nuclear engineering TK1-9971 Yu-Ru Lin Yu-Hsien Lin Yi-Yun Yang Yung-Chun Wu Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors
description	As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and compared the electrical characteristics of single-NS and stacked-NS structures. The performance of the multi-gate and gate-all-around transistors was then further analyzed. The stacked gate-all-around thin-film transistor exhibited superior performance and excellent temperature design flexibility. In brief, the stacked gate-all-around structure for thin-film transistors structure has the potential to overcome the challenges associated with downscaling.
format	article
author	Yu-Ru Lin Yu-Hsien Lin Yi-Yun Yang Yung-Chun Wu
author_facet	Yu-Ru Lin Yu-Hsien Lin Yi-Yun Yang Yung-Chun Wu
author_sort	Yu-Ru Lin
title	Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors
title_short	Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors
title_full	Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors
title_fullStr	Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors
title_full_unstemmed	Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors
title_sort	comprehensive study of stacked nanosheet-type channel based on junctionless gate-all-around thin-film transistors
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/91bfabc34f474cfeb3a50c2a484d8f87
work_keys_str_mv	AT yurulin comprehensivestudyofstackednanosheettypechannelbasedonjunctionlessgateallaroundthinfilmtransistors AT yuhsienlin comprehensivestudyofstackednanosheettypechannelbasedonjunctionlessgateallaroundthinfilmtransistors AT yiyunyang comprehensivestudyofstackednanosheettypechannelbasedonjunctionlessgateallaroundthinfilmtransistors AT yungchunwu comprehensivestudyofstackednanosheettypechannelbasedonjunctionlessgateallaroundthinfilmtransistors
_version_	1718420679742717952

Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors

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