Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors
As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and compared the electrical characteristics of single...
Enregistré dans:
| Auteurs principaux: | , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
IEEE
2019
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/91bfabc34f474cfeb3a50c2a484d8f87 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|