Ultrasensitive negative capacitance phototransistors

Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room...

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Autores principales: Luqi Tu, Rongrong Cao, Xudong Wang, Yan Chen, Shuaiqin Wu, Fang Wang, Zhen Wang, Hong Shen, Tie Lin, Peng Zhou, Xiangjian Meng, Weida Hu, Qi Liu, Jianlu Wang, Ming Liu, Junhao Chu
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Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a
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spelling oai:doaj.org-article:91e97539611e4b04ad2a7430b9a9453a2021-12-02T16:56:50ZUltrasensitive negative capacitance phototransistors10.1038/s41467-019-13769-z2041-1723https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a2020-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-13769-zhttps://doaj.org/toc/2041-1723Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature.Luqi TuRongrong CaoXudong WangYan ChenShuaiqin WuFang WangZhen WangHong ShenTie LinPeng ZhouXiangjian MengWeida HuQi LiuJianlu WangMing LiuJunhao ChuNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Luqi Tu
Rongrong Cao
Xudong Wang
Yan Chen
Shuaiqin Wu
Fang Wang
Zhen Wang
Hong Shen
Tie Lin
Peng Zhou
Xiangjian Meng
Weida Hu
Qi Liu
Jianlu Wang
Ming Liu
Junhao Chu
Ultrasensitive negative capacitance phototransistors
description Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature.
format article
author Luqi Tu
Rongrong Cao
Xudong Wang
Yan Chen
Shuaiqin Wu
Fang Wang
Zhen Wang
Hong Shen
Tie Lin
Peng Zhou
Xiangjian Meng
Weida Hu
Qi Liu
Jianlu Wang
Ming Liu
Junhao Chu
author_facet Luqi Tu
Rongrong Cao
Xudong Wang
Yan Chen
Shuaiqin Wu
Fang Wang
Zhen Wang
Hong Shen
Tie Lin
Peng Zhou
Xiangjian Meng
Weida Hu
Qi Liu
Jianlu Wang
Ming Liu
Junhao Chu
author_sort Luqi Tu
title Ultrasensitive negative capacitance phototransistors
title_short Ultrasensitive negative capacitance phototransistors
title_full Ultrasensitive negative capacitance phototransistors
title_fullStr Ultrasensitive negative capacitance phototransistors
title_full_unstemmed Ultrasensitive negative capacitance phototransistors
title_sort ultrasensitive negative capacitance phototransistors
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a
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