Ultrasensitive negative capacitance phototransistors

Ultrasensitive negative capacitance phototransistors

Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room...

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Bibliographic Details
Main Authors: Luqi Tu, Rongrong Cao, Xudong Wang, Yan Chen, Shuaiqin Wu, Fang Wang, Zhen Wang, Hong Shen, Tie Lin, Peng Zhou, Xiangjian Meng, Weida Hu, Qi Liu, Jianlu Wang, Ming Liu, Junhao Chu
Format: article
Language:EN
Published: Nature Portfolio 2020
Subjects:
Science
Q
Online Access:https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a
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https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a

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