Ultrasensitive negative capacitance phototransistors
Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 1014 cm Hz1/2 W−1 at room...
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , , , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2020
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/91e97539611e4b04ad2a7430b9a9453a |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|