Defect-induced B4C electrodes for high energy density supercapacitor devices

Abstract Boron carbide powders were synthesized by mechanically activated annealing process using anhydrous boron oxide (B2O3) and varying carbon (C) sources such as graphite and activated carbon: The precursors were mechanically activated for different times in a high energy ball mill and reacted i...

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Autores principales:	Özge Balcı, Merve Buldu, Ameen Uddin Ammar, Kamil Kiraz, Mehmet Somer, Emre Erdem
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/922d2b6960f9422389b48b3e9af4c615
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spelling	oai:doaj.org-article:922d2b6960f9422389b48b3e9af4c6152021-12-02T15:56:56ZDefect-induced B4C electrodes for high energy density supercapacitor devices10.1038/s41598-021-90878-02045-2322https://doaj.org/article/922d2b6960f9422389b48b3e9af4c6152021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-90878-0https://doaj.org/toc/2045-2322Abstract Boron carbide powders were synthesized by mechanically activated annealing process using anhydrous boron oxide (B2O3) and varying carbon (C) sources such as graphite and activated carbon: The precursors were mechanically activated for different times in a high energy ball mill and reacted in an induction furnace. According to the Raman analyses of the carbon sources, the I(D)/I(G) ratio increased from ~ 0.25 to ~ 0.99, as the carbon material changed from graphite to active carbon, indicating the highly defected and disordered structure of active carbon. Complementary advanced EPR analysis of defect centers in B4C revealed that the intrinsic defects play a major role in the electrochemical performance of the supercapacitor device once they have an electrode component made of bare B4C. Depending on the starting material and synthesis conditions the conductivity, energy, and power density, as well as capacity, can be controlled hence high-performance supercapacitor devices can be produced.Özge BalcıMerve BulduAmeen Uddin AmmarKamil KirazMehmet SomerEmre ErdemNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Özge Balcı Merve Buldu Ameen Uddin Ammar Kamil Kiraz Mehmet Somer Emre Erdem Defect-induced B4C electrodes for high energy density supercapacitor devices
description	Abstract Boron carbide powders were synthesized by mechanically activated annealing process using anhydrous boron oxide (B2O3) and varying carbon (C) sources such as graphite and activated carbon: The precursors were mechanically activated for different times in a high energy ball mill and reacted in an induction furnace. According to the Raman analyses of the carbon sources, the I(D)/I(G) ratio increased from ~ 0.25 to ~ 0.99, as the carbon material changed from graphite to active carbon, indicating the highly defected and disordered structure of active carbon. Complementary advanced EPR analysis of defect centers in B4C revealed that the intrinsic defects play a major role in the electrochemical performance of the supercapacitor device once they have an electrode component made of bare B4C. Depending on the starting material and synthesis conditions the conductivity, energy, and power density, as well as capacity, can be controlled hence high-performance supercapacitor devices can be produced.
format	article
author	Özge Balcı Merve Buldu Ameen Uddin Ammar Kamil Kiraz Mehmet Somer Emre Erdem
author_facet	Özge Balcı Merve Buldu Ameen Uddin Ammar Kamil Kiraz Mehmet Somer Emre Erdem
author_sort	Özge Balcı
title	Defect-induced B4C electrodes for high energy density supercapacitor devices
title_short	Defect-induced B4C electrodes for high energy density supercapacitor devices
title_full	Defect-induced B4C electrodes for high energy density supercapacitor devices
title_fullStr	Defect-induced B4C electrodes for high energy density supercapacitor devices
title_full_unstemmed	Defect-induced B4C electrodes for high energy density supercapacitor devices
title_sort	defect-induced b4c electrodes for high energy density supercapacitor devices
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/922d2b6960f9422389b48b3e9af4c615
work_keys_str_mv	AT ozgebalcı defectinducedb4celectrodesforhighenergydensitysupercapacitordevices AT mervebuldu defectinducedb4celectrodesforhighenergydensitysupercapacitordevices AT ameenuddinammar defectinducedb4celectrodesforhighenergydensitysupercapacitordevices AT kamilkiraz defectinducedb4celectrodesforhighenergydensitysupercapacitordevices AT mehmetsomer defectinducedb4celectrodesforhighenergydensitysupercapacitordevices AT emreerdem defectinducedb4celectrodesforhighenergydensitysupercapacitordevices
_version_	1718385405546463232

Defect-induced B4C electrodes for high energy density supercapacitor devices

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