Microstructural Analysis of Novel Preceramic Paper-Derived SiC<sub>f</sub>/SiC Composites

This paper presents the results of microstructural analysis of novel preceramic paper-derived SiCf/SiC composites fabricated by spark plasma sintering. The sintering temperature and pressure were 2100/2200 °C and 60/100 MPa, respectively. The content of fibers in the composites was approx. 10 wt %....

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Autores principales: Ke Li, Egor Kashkarov, Hailiang Ma, Ping Fan, Qiaoli Zhang, Peng Zhang, Jilong Zhang, Zhaohui Wu, Larissa Wahl, Roman Laptev, Andrey Lider, Nahum Travitzky, Daqing Yuan
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spelling oai:doaj.org-article:92467ff972cb4e038f462d2826867bbc2021-11-25T18:13:10ZMicrostructural Analysis of Novel Preceramic Paper-Derived SiC<sub>f</sub>/SiC Composites10.3390/ma142267371996-1944https://doaj.org/article/92467ff972cb4e038f462d2826867bbc2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/6737https://doaj.org/toc/1996-1944This paper presents the results of microstructural analysis of novel preceramic paper-derived SiCf/SiC composites fabricated by spark plasma sintering. The sintering temperature and pressure were 2100/2200 °C and 60/100 MPa, respectively. The content of fibers in the composites was approx. 10 wt %. The SiC<sub>f</sub>/SiC composites were analyzed by positron annihilation methods, X-ray diffraction technology, scanning electron microscopy, and Raman spectroscopy. Longer sintering time causes the proportion of the 6H-SiC composition to increase to ~80%. The increase in sintering temperature from 2100 °C to 2200 °C leads to partial transition of 4H-SiC to 6H-SiC during the sintering process, and the long-life component of positrons indicates the formation of Si vacancies. The Raman characteristic peaks of turbostratic graphite appear in the Raman spectrum of SiC fibers, this is caused by the diffusion of carbon from the surface of the SiC fiber and the preceramic paper during the high-temperature sintering process.Ke LiEgor KashkarovHailiang MaPing FanQiaoli ZhangPeng ZhangJilong ZhangZhaohui WuLarissa WahlRoman LaptevAndrey LiderNahum TravitzkyDaqing YuanMDPI AGarticlelaminated compositesilicon carbidemicrostructurespositron annihilationTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6737, p 6737 (2021)
institution DOAJ
collection DOAJ
language EN
topic laminated composite
silicon carbide
microstructures
positron annihilation
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
spellingShingle laminated composite
silicon carbide
microstructures
positron annihilation
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Ke Li
Egor Kashkarov
Hailiang Ma
Ping Fan
Qiaoli Zhang
Peng Zhang
Jilong Zhang
Zhaohui Wu
Larissa Wahl
Roman Laptev
Andrey Lider
Nahum Travitzky
Daqing Yuan
Microstructural Analysis of Novel Preceramic Paper-Derived SiC<sub>f</sub>/SiC Composites
description This paper presents the results of microstructural analysis of novel preceramic paper-derived SiCf/SiC composites fabricated by spark plasma sintering. The sintering temperature and pressure were 2100/2200 °C and 60/100 MPa, respectively. The content of fibers in the composites was approx. 10 wt %. The SiC<sub>f</sub>/SiC composites were analyzed by positron annihilation methods, X-ray diffraction technology, scanning electron microscopy, and Raman spectroscopy. Longer sintering time causes the proportion of the 6H-SiC composition to increase to ~80%. The increase in sintering temperature from 2100 °C to 2200 °C leads to partial transition of 4H-SiC to 6H-SiC during the sintering process, and the long-life component of positrons indicates the formation of Si vacancies. The Raman characteristic peaks of turbostratic graphite appear in the Raman spectrum of SiC fibers, this is caused by the diffusion of carbon from the surface of the SiC fiber and the preceramic paper during the high-temperature sintering process.
format article
author Ke Li
Egor Kashkarov
Hailiang Ma
Ping Fan
Qiaoli Zhang
Peng Zhang
Jilong Zhang
Zhaohui Wu
Larissa Wahl
Roman Laptev
Andrey Lider
Nahum Travitzky
Daqing Yuan
author_facet Ke Li
Egor Kashkarov
Hailiang Ma
Ping Fan
Qiaoli Zhang
Peng Zhang
Jilong Zhang
Zhaohui Wu
Larissa Wahl
Roman Laptev
Andrey Lider
Nahum Travitzky
Daqing Yuan
author_sort Ke Li
title Microstructural Analysis of Novel Preceramic Paper-Derived SiC<sub>f</sub>/SiC Composites
title_short Microstructural Analysis of Novel Preceramic Paper-Derived SiC<sub>f</sub>/SiC Composites
title_full Microstructural Analysis of Novel Preceramic Paper-Derived SiC<sub>f</sub>/SiC Composites
title_fullStr Microstructural Analysis of Novel Preceramic Paper-Derived SiC<sub>f</sub>/SiC Composites
title_full_unstemmed Microstructural Analysis of Novel Preceramic Paper-Derived SiC<sub>f</sub>/SiC Composites
title_sort microstructural analysis of novel preceramic paper-derived sic<sub>f</sub>/sic composites
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/92467ff972cb4e038f462d2826867bbc
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