Compositional and aspect studies of sulphur passivation on n-GaAs

A real GaAs surface is covered with a relatively thick layer (~nm) of native oxide responsi- ble for the surface Fermi level pinning within the band gap of the semiconductor. The method presented in this work is the sulphur passivation by treating the semiconductor in sulphide solutions that combi...

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Autores principales:	Ghita, R., Negrila, Constantin, Ungureanu, F., Predoi, D.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2010
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/924e7d65540940b79ceaeacc0f75bc01
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spelling	oai:doaj.org-article:924e7d65540940b79ceaeacc0f75bc012021-11-21T12:03:15ZCompositional and aspect studies of sulphur passivation on n-GaAs2537-63651810-648Xhttps://doaj.org/article/924e7d65540940b79ceaeacc0f75bc012010-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2010/article/4262https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365A real GaAs surface is covered with a relatively thick layer (~nm) of native oxide responsi- ble for the surface Fermi level pinning within the band gap of the semiconductor. The method presented in this work is the sulphur passivation by treating the semiconductor in sulphide solutions that combines both chemical and electronic passivation by reducing the surface state density (e.g., pure ammonium sulphide and sulphur monochloride). The passivated surface was examined by SEM, EDS and XPS techniques, that put into evidence the existence of an adherent layer of sulphur compound as a result of chemical interaction of sulphur ions with n-GaAs surface. Ghita, R.Negrila, ConstantinUngureanu, F.Predoi, D.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 9, Iss 3-4, Pp 270-274 (2010)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Ghita, R. Negrila, Constantin Ungureanu, F. Predoi, D. Compositional and aspect studies of sulphur passivation on n-GaAs
description	A real GaAs surface is covered with a relatively thick layer (~nm) of native oxide responsi- ble for the surface Fermi level pinning within the band gap of the semiconductor. The method presented in this work is the sulphur passivation by treating the semiconductor in sulphide solutions that combines both chemical and electronic passivation by reducing the surface state density (e.g., pure ammonium sulphide and sulphur monochloride). The passivated surface was examined by SEM, EDS and XPS techniques, that put into evidence the existence of an adherent layer of sulphur compound as a result of chemical interaction of sulphur ions with n-GaAs surface.
format	article
author	Ghita, R. Negrila, Constantin Ungureanu, F. Predoi, D.
author_facet	Ghita, R. Negrila, Constantin Ungureanu, F. Predoi, D.
author_sort	Ghita, R.
title	Compositional and aspect studies of sulphur passivation on n-GaAs
title_short	Compositional and aspect studies of sulphur passivation on n-GaAs
title_full	Compositional and aspect studies of sulphur passivation on n-GaAs
title_fullStr	Compositional and aspect studies of sulphur passivation on n-GaAs
title_full_unstemmed	Compositional and aspect studies of sulphur passivation on n-GaAs
title_sort	compositional and aspect studies of sulphur passivation on n-gaas
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2010
url	https://doaj.org/article/924e7d65540940b79ceaeacc0f75bc01
work_keys_str_mv	AT ghitar compositionalandaspectstudiesofsulphurpassivationonngaas AT negrilaconstantin compositionalandaspectstudiesofsulphurpassivationonngaas AT ungureanuf compositionalandaspectstudiesofsulphurpassivationonngaas AT predoid compositionalandaspectstudiesofsulphurpassivationonngaas
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Compositional and aspect studies of sulphur passivation on n-GaAs

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