Compositional and aspect studies of sulphur passivation on n-GaAs
A real GaAs surface is covered with a relatively thick layer (~nm) of native oxide responsi- ble for the surface Fermi level pinning within the band gap of the semiconductor. The method presented in this work is the sulphur passivation by treating the semiconductor in sulphide solutions that combi...
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| Auteurs principaux: | , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2010
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/924e7d65540940b79ceaeacc0f75bc01 |
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