Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates

Unrestricted integration of single-crystal oxide films on Si substrates allows for exploitation of emerging functionality of new materials in mature silicon devices. Here the authors integrate epitaxial oxide films with sharp metal-insulator transition on Si substrates by epitaxial lift-off of a fre...

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Autores principales: Dong Kyu Lee, Yunkyu Park, Hyeji Sim, Jinheon Park, Younghak Kim, Gi-Yeop Kim, Chang-Beom Eom, Si-Young Choi, Junwoo Son
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Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/92905b9bc6d94e84987d903f42efdbfb
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spelling oai:doaj.org-article:92905b9bc6d94e84987d903f42efdbfb2021-12-02T18:01:17ZHeterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates10.1038/s41467-021-24740-22041-1723https://doaj.org/article/92905b9bc6d94e84987d903f42efdbfb2021-08-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-24740-2https://doaj.org/toc/2041-1723Unrestricted integration of single-crystal oxide films on Si substrates allows for exploitation of emerging functionality of new materials in mature silicon devices. Here the authors integrate epitaxial oxide films with sharp metal-insulator transition on Si substrates by epitaxial lift-off of a freestanding nanomembrane.Dong Kyu LeeYunkyu ParkHyeji SimJinheon ParkYounghak KimGi-Yeop KimChang-Beom EomSi-Young ChoiJunwoo SonNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Dong Kyu Lee
Yunkyu Park
Hyeji Sim
Jinheon Park
Younghak Kim
Gi-Yeop Kim
Chang-Beom Eom
Si-Young Choi
Junwoo Son
Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates
description Unrestricted integration of single-crystal oxide films on Si substrates allows for exploitation of emerging functionality of new materials in mature silicon devices. Here the authors integrate epitaxial oxide films with sharp metal-insulator transition on Si substrates by epitaxial lift-off of a freestanding nanomembrane.
format article
author Dong Kyu Lee
Yunkyu Park
Hyeji Sim
Jinheon Park
Younghak Kim
Gi-Yeop Kim
Chang-Beom Eom
Si-Young Choi
Junwoo Son
author_facet Dong Kyu Lee
Yunkyu Park
Hyeji Sim
Jinheon Park
Younghak Kim
Gi-Yeop Kim
Chang-Beom Eom
Si-Young Choi
Junwoo Son
author_sort Dong Kyu Lee
title Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates
title_short Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates
title_full Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates
title_fullStr Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates
title_full_unstemmed Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates
title_sort heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/92905b9bc6d94e84987d903f42efdbfb
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