Effect of HfO<sub>2</sub>-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

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Effect of HfO<sub>2</sub>-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

We report the fabrication of bottom gate a-IGZO TFTs based on HfO<sub>2</sub> stacked dielectrics with decent electrical characteristics and bias stability. The microscopic, electrical, and optical properties of room temperature deposited a-IGZO film with varied oxygen content were explo...

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Autores principales:	Ruozheng Wang, Qiang Wei, Jie Li, Jiao Fu, Yiwei Liu, Tianfei Zhu, Cui Yu, Gang Niu, Shengli Wu, Hongxing Wang
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	thin-film transistors amorphous IGZO multi-dielectrics annealing bias stability Engineering (General). Civil engineering (General) TA1-2040
Acceso en línea:	https://doaj.org/article/939dc7e05e9c4b57aacc3df576f81f19
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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