Current crowding mediated large contact noise in graphene field-effect transistors
The performance of graphene field effect transistors is adversely affected by fluctuations in the electrical resistance at the graphene/metal interface. Here, the authors unveil the microscopic origin of such contact noise, highlighting the role of current crowding.
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/95d32f108b3849d1910209b6e411b939 |
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| Sumario: | The performance of graphene field effect transistors is adversely affected by fluctuations in the electrical resistance at the graphene/metal interface. Here, the authors unveil the microscopic origin of such contact noise, highlighting the role of current crowding. |
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